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IRFM220AL99Z PDF预览

IRFM220AL99Z

更新时间: 2024-11-16 20:04:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲光电二极管晶体管
页数 文件大小 规格书
7页 275K
描述
Power Field-Effect Transistor, 1.13A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IRFM220AL99Z 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84雪崩能效等级(Eas):77 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (ID):1.13 A
最大漏源导通电阻:0.8 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):9 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFM220AL99Z 数据手册

 浏览型号IRFM220AL99Z的Datasheet PDF文件第2页浏览型号IRFM220AL99Z的Datasheet PDF文件第3页浏览型号IRFM220AL99Z的Datasheet PDF文件第4页浏览型号IRFM220AL99Z的Datasheet PDF文件第5页浏览型号IRFM220AL99Z的Datasheet PDF文件第6页浏览型号IRFM220AL99Z的Datasheet PDF文件第7页 
IRFM220A  
Advanced Power MOSFET  
FEATURES  
BVDSS = 200 V  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitance  
W
RDS(on) = 0.8  
ID = 1.13 A  
Improved Gate Charge  
Extended Safe Operating Area  
SOT-223  
m
Lower Leakage Current : 10 A (Max.) @ VDS = 200V  
2
Low RDS(ON) : 0.626 (Typ.)  
W
1
3
1. Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Value  
Units  
VDSS  
Drain-to-Source Voltage  
V
200  
1.13  
0.9  
Continuous Drain Current (TA=25o  
Continuous Drain Current (TA=70  
Drain Current-Pulsed  
)
)
C
ID  
A
o
C
IDM  
VGS  
EAS  
IAR  
A
V
9
1
O
+
_
Gate-to-Source Voltage  
30  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
2
77  
O
1.13  
0.24  
5.0  
1
O
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Total Power Dissipation (TA=25o  
mJ  
V/ns  
W
1
O
3
O
*
)
C
2.4  
PD  
W/oC  
*
Linear Derating Factor  
0.019  
Operating Junction and  
TJ , TSTG  
- 55 to +150  
300  
Storage Temperature Range  
oC  
Maximum Lead Temp. for Soldering  
Purposes, 1/8 “ from case for 5-seconds  
TL  
Thermal Resistance  
Symbol  
Characteristic  
Typ.  
--  
Max.  
Units  
oC/W  
RqJA  
*
Junction-to-Ambient  
52  
*
When mounted on the minimum pad size recommended (PCB Mount).  
Rev. B  
©1999 Fairchild Semiconductor Corporation  

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