Datasheet > IRFHS9301TR2PBF

IRFHS9301TR2PBF

更新时间： 2024-10-28 11:09:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	322K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IRFHS9301TR2PBF 数据手册

IRFHS9301TR/TR2PbF

1000

100

VGS

-10V

VGS

TOP

-10V

-8.0V

-5.0V

-4.5V

-3.5V

-3.3V

-3.0V

-2.8V

-8.0V

-5.0V

-4.5V

-3.5V

-3.3V

-3.0V

-2.8V

100

BOTTOM

-2.8V

≤60μs PULSE WIDTH

Tj = 150°C

60μs

≤

PULSE WIDTH

Tj = 25°C

0.1

100

0.1

100

-V , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

100

1.6

1.4

1.2

1.0

0.8

0.6

= -7.8A

= -10V

= 150°C

= 25°C

= -15V

60μs PULSE WIDTH

≤

0.1

-60 -40 -20

20 40 60 80 100120 140 160

, Junction Temperature (°C)

-V , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

10000

1000

100

= 0V,

f = 1 KHZ

I = -7.8A

= -24V

= -15V

= C + C , C SHORTED

iss

gd ds

= C

rss

= C + C

VDS= -6V

oss

iss

oss

rss

100

10 12 14 16 18

-V , Drain-to-Source Voltage (V)

Q , Total Gate Charge (nC)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

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IRFHS9301TR2PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFHS9301TRPBF	INFINEON	类似代替	HEXFET Power MOSFET

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