Datasheet > IRFHS9301TR2PBF

IRFHS9301TR2PBF

更新时间： 2024-01-15 22:45:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	322K
描述
HEXFET Power MOSFET

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数据手册

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IRFHS9301TR2PBF 数据手册

IRFHS9301TR/TR2PbF

100

= -7.8A

Vgs = -4.5V

= 125°C

Vgs = -10V

= 25°C

-I , Drain Current (A)

-V

GS,

Gate -to -Source Voltage (V)

Fig 13. Typical On-Resistance vs. Drain Current

Fig 12. On-Resistance vs. Gate Voltage

600

500

400

300

200

100

1E-5

1E-4

1E-3

1E-2

1E-1

1E+0

Time (sec)

Fig 14. Typical Power vs. Time

Driver Gate Drive

P.W.

Period

D =

D.U.T *

=10V

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

V_DD

• di/dt controlled by R_G

Re-Applied

Voltage

R_G

• Driver same type as D.U.T.

Body Diode

Inductor Current

Forward Drop

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

* Reverse Polarity of D.U.T for P-Channel

Fig 15. Diode Reverse Recovery Test Circuit for P-Channel HEXFET^®Power MOSFETs

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