Datasheet > IRFHS9301TR2PBF

IRFHS9301TR2PBF

更新时间： 2024-01-10 08:30:14

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	322K
描述
HEXFET Power MOSFET

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数据手册

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IRFHS9301TR2PBF 数据手册

IRFHS9301TR/TR2PbF

Static @ T_J= 25°C (unless otherwise specified)

Conditions

V_GS= 0V, I_D= -250μA

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Min.

Typ.

–––

0.02

Max.

–––

Units

BV_DSS

-30

–––

-1.3

–––

9.3

Reference to 25°C, I_D= -1mA

V_GS= -10V, I_D= -7.8A

V_GS= -4.5V, I_D= -6.2A

ΔΒV_DSS/ΔT_J

R_DS(on)

V/°C

Static Drain-to-Source On-Resistance

mΩ

V_GS(th)

Gate Threshold Voltage

-1.8

-4.8

–––

6.9

-2.4

–––

-1.0

-150

-100

100

–––

V_DS= V_GS, I_D= -25μA

V_GS(th)

I_DSS

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

mV/°C

V_DS= -24V, V_GS= 0V

μA

_DS= -24V, V_GS= 0V, T_J= 125°C

_GS= -20V

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

V_GS= 20V

_DS= -10V, I_D= -7.8A

gfs

Q_g

V_DS= -15V,V_GS= -4.5V,I_D= - 7.8A

V_GS= -10V

–––

Q_g

Total Gate Charge

_DS= -15V

Q_gs

Q_gd

R_G

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain Charge

Gate Resistance

2.1

3.9

I_D= -7.8A

_DD= -15V, V_GS= -4.5V

Turn-On Delay Time

Rise Time

I_D= -7.8A

t_d(off)

t_f

R_G= 2.0

Turn-Off Delay Time

Fall Time

See Figs. 19a & 19b

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

580

125

V_DS= -25V

Output Capacitance

Reverse Transfer Capacitance

ƒ = 1.0KHz

Diode Characteristics

Conditions

Parameter

Min.

Typ.

Max.

Units

I_S

MOSFET symbol

showing the

Continuous Source Current

(Body Diode)

–––

-8.5

I_SM

integral reverse

p-n junction diode.

Pulsed Source Current

(Body Diode)

–––

-52

V_SD

T = 25°C, I = -7.8A, V = 0V

Diode Forward Voltage

-1.2

t_rr

T = 25°C, I = -7.8A, V_DD= -15V

Reverse Recovery Time

Reverse Recovery Charge

–––

Q_rr

di/dt = 280/μs

110

170

Thermal Resistance

Typ.

–––

Max.

Parameter

Junction-to-Case

Units

R_θJC(Bottom)

R_θJC(Top)

R_θJA

°C/W

Junction-to-Ambient

–––

Junction-to-Ambient (t<10s)

R_θJA

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Current limited by package.

Pulse width ≤ 400μs; duty cycle ≤ 2%.

When mounted on 1 inch square copper board.

ꢀ R_θis measured at T_Jof approximately 90°C.

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