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IRFD310PBF PDF预览

IRFD310PBF

更新时间: 2024-09-26 05:39:31
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管开关光电二极管局域网
页数 文件大小 规格书
8页 1257K
描述
Power MOSFET

IRFD310PBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DIP
包装说明:IN-LINE, R-PDIP-T3针数:4
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:6 weeks风险等级:5.14
Is Samacsys:N其他特性:AVALANCHE RATED
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:400 V最大漏极电流 (Abs) (ID):0.4 A
最大漏极电流 (ID):0.35 A最大漏源导通电阻:3.6 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDIP-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFD310PBF 数据手册

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IRFD310, SiHFD310  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
400  
Available  
• Repetitive Avalanche Rated  
• For Automatic Insertion  
• End Stackable  
R
DS(on) (Ω)  
VGS = 10 V  
3.6  
RoHS*  
Qg (Max.) (nC)  
17  
3.4  
COMPLIANT  
Q
Q
gs (nC)  
gd (nC)  
• Fast Switching  
8.5  
Configuration  
Single  
• Ease of Paralleling  
• Simple Drive Requirements  
• Lead (Pb)-free Available  
D
HEXDIP  
DESCRIPTION  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
S
G
The 4 pin DIP package is a low cost machine-insertiable  
case style which can be stacked in multiple combinations on  
standard 0.1" pin centers. The dual drain serveres as a  
thermal link to the mounting surface for power dissipation  
levels up to 1 W.  
D
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
HEXDIP  
IRFD310PbF  
SiHFD310-E3  
IRFD310  
Lead (Pb)-free  
SnPb  
SiHFD310  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
400  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
20  
TC = 25 °C  
TC =100°C  
0.35  
Continuous Drain Current  
V
GS at 10 V  
ID  
0.22  
A
Pulsed Drain Currenta  
IDM  
2.8  
Linear Derating Factor  
0.0083  
46  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Avalanche Currenta  
EAS  
IAR  
0.35  
Repetitive Avalanche Energya  
EAR  
0.10  
mJ  
W
Maximum Power Dissipation  
TC = 25 °C  
PD  
1.0  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
4.0  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 150  
300d  
°C  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 41 mH, RG = 25 Ω, IAS = 1.4 A (see fig. 12).  
c. ISD 2.0 A, dI/dt 40 A/µs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91133  
S-Pending-Rev. A, 23-Jun-08  
www.vishay.com  
1
WORK-IN-PROGRESS  

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