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IRFD310 PDF预览

IRFD310

更新时间: 2024-09-25 22:51:39
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
8页 405K
描述
Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=0.35A)

IRFD310 数据手册

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Previous Datasheet  
Index  
Next Data Sheet  
PD -9.1225  
IRFD310  
HEXFET® Power MOSFET  
Dynamic dv/dt Rating  
Repetitive Avalanche Rated  
For Automatic Insertion  
End Stackable  
VDSS = 400V  
RDS(on) = 3.6Ω  
ID = 0.35A  
Fast Switching  
Ease of paralleling  
Simple Drive Requirements  
Description  
Third Generation HEXFETs from International Rectifier provide the designer  
with the best combination of fast switching, ruggedized device design, low on-  
resistance and cost-effectiveness.  
The 4-pin DIP package is a low-cost machine-insertable case style which can be  
stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain  
serves as a thermal link to the mounting surface for power dissipation levels up to  
1 watt.  
HD-1  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10 V  
Continuous Drain Current, VGS @ 10 V  
Pulsed Drain Current  
0.35  
A
0.22  
2.8  
PD @TC = 25°C  
Power Dissipation  
1.0  
W
W/°C  
V
Linear Derating Factor  
0.0083  
±20  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
Avalanche Current  
46  
mJ  
A
0.35  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction and  
0.10  
mJ  
V/ns  
4.0  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case)  
Thermal Resistance  
Parameter  
Junction-to-Ambient  
Min.  
Typ.  
Max. Units  
RθJA  
62  
°C/W  
Revision 0  
To Order  
 

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