IRF9640PBF

更新时间： 2024-09-30 05:39:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	1929K
描述
Power MOSFET

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中文翻译

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数据手册

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IRF9640PBF 数据手册

IRF9640, SiHF9640

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

- 200

Available

• Repetitive Avalanche Rated

• P-Channel

R_DS(on)(Ω)

Q_g(Max.) (nC)

Q_gs(nC)

V_GS= - 10 V

0.50

RoHS*

COMPLIANT

7.1

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

Q_gd(nC)

Configuration

Single

DESCRIPTION

TO-220

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

P-Channel MOSFET

ORDERING INFORMATION

Package

TO-220

IRF9640PbF

SiHF9640-E3

IRF9640

Lead (Pb)-free

SnPb

SiHF9640

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

- 200

UNIT

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

- 11

Continuous Drain Current

V_GSat - 10 V

I_D

T_C= 100 °C

- 6.8

- 44

Pulsed Drain Current^a

I_DM

Linear Derating Factor

1.0

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

700

- 11

E_AR

Maximum Power Dissipation

T_C= 25 °C

P_D

125

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

- 5.0

- 55 to + 150

300^d

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= - 50 V, starting T_J= 25 °C, L = 8.7 mH, R_G= 25 Ω, I_AS= - 11 A (see fig. 12).

c. I_SD≤ - 11 A, dI/dt ≤ 150 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91086

S-81272-Rev. A, 16-Jun-08

www.vishay.com

12 3 4 5 6 7 8

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