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IRF9530S

更新时间： 2024-11-07 21:21:47
品牌 Logo 应用领域
威世 - VISHAY 开关晶体管
页数 文件大小 规格书
8页 187K
描述
Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-220, 3 PIN

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IRF9530S 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5Is Samacsys：N
雪崩能效等级（Eas）：400 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (Abs) (ID)：12 A
最大漏极电流 (ID)：12 A最大漏源导通电阻：0.3 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSSO-G2
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：225极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：88 W最大脉冲漏极电流 (IDM)：48 A
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRF9530S 数据手册

 浏览型号IRF9530S的Datasheet PDF文件第2页浏览型号IRF9530S的Datasheet PDF文件第3页浏览型号IRF9530S的Datasheet PDF文件第4页浏览型号IRF9530S的Datasheet PDF文件第5页浏览型号IRF9530S的Datasheet PDF文件第6页浏览型号IRF9530S的Datasheet PDF文件第7页 
IRF9530S, SiHF9530S  
www.vishay.com  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
• Surface mount  
VDS (V)  
DS(on) ()  
Qg max. (nC)  
-100  
• Available in tape and reel  
• Dynamic dV/dt rating  
• Repetitive avalanche rated  
• P-channel  
• 175 °C operating temperature  
• Fast switching  
• Material categorization: for definitions of  
R
VGS = -10 V  
0.30  
Available  
Available  
38  
6.8  
21  
Q
gs (nC)  
gd (nC)  
Q
Configuration  
Single  
compliance please see www.vishay.com/doc?99912  
S
Note  
This datasheet provides information about parts that are  
RoHS-compliant and / or parts that are non-RoHS-compliant. For  
example, parts with lead (Pb) terminations are not RoHS-compliant.  
Please see the information / tables in this datasheet for details.  
*
D2PAK (TO-263)  
G
DESCRIPTION  
Third generation power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
D
D
G
S
P-Channel MOSFET  
The D2PAK (TO-263) is a surface mount power package  
capable of accommodating die sizes up to HEX-4. It  
provides the highest power capability and the lowest  
possible on-resistance in any existing surface mount  
package. The D2PAK (TO-263) is suitable for high current  
applications because of its low internal connection  
resistance and can dissipate up to 2.0 W in a typical surface  
mount application.  
ORDERING INFORMATION  
Package  
D2PAK (TO-263)  
SiHF9530S-GE3  
IRF9530SPbF  
D2PAK (TO-263)  
D2PAK (TO-263)  
Lead (Pb)-free and Halogen-free  
SiHF9530STRL-GE3 a  
IRF9530STRLPbF a  
SiHF9530STL-E3 a  
SiHF9530STRR-GE3 a  
IRF9530STRRPbF a  
SiHF9530STR-E3 a  
Lead (Pb)-free  
SiHF9530S-E3  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
-100  
20  
V
T
C = 25 °C  
-12  
Continuous Drain Current  
VGS at - 10 V  
ID  
TC = 100 °C  
-8.2  
A
Pulsed Drain Current a  
IDM  
-48  
Linear Derating Factor  
0.59  
0.025  
400  
W/°C  
Linear Derating Factor (PCB mount) e  
Single Pulse Avalanche Energy b  
Avalanche Current a  
EAS  
IAR  
mJ  
A
-12  
Repetitive Avalanche Energy a  
EAR  
8.8  
mJ  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB mount) e  
Peak Diode Recovery dV/dt c  
T
C = 25 °C  
88  
PD  
W
V/ns  
°C  
TA = 25 °C  
3.7  
dV/dt  
- 5.5  
-55 to +175  
300  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak temperature) d  
TJ, Tstg  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = -25 V, starting TJ = 25 °C, L = 4.2 mH, Rg = 25 , IAS = -12 A (see fig. 12).  
c. ISD - 12 A, dI/dt 140 A/μs, VDD VDS, TJ 175 °C.  
d. 1.6 mm from case.  
e. When mounted on 1" square PCB (FR-4 or G-10 material).  
S16-0754-Rev. D, 02-May-16  
Document Number: 91077  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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IRF9530S 替代型号

型号 品牌 替代类型 描述 数据表
IRF9530STRRPBF VISHAY

完全替代

 TRANSISTOR 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, T
IRF9530STRLPBF VISHAY

完全替代

 Power MOSFET
IRF9530SPBF VISHAY

类似代替

 TRANSISTOR 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, T

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