5秒后页面跳转
IRF9317TRPBF PDF预览

IRF9317TRPBF

更新时间: 2024-11-20 12:28:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体电池开关晶体管功率场效应晶体管脉冲光电二极管电脑PC
页数 文件大小 规格书
8页 225K
描述
Charge and Discharge Switch for Notebook PC Battery Application

IRF9317TRPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, SOP-8Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:0.89Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:926393
Samacsys Pin Count:8Samacsys Part Category:MOSFET (P-Channel)
Samacsys Package Category:Small Outline PackagesSamacsys Footprint Name:SO-8
Samacsys Released Date:2019-07-02 08:46:54Is Samacsys:N
雪崩能效等级(Eas):330 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):16 A
最大漏极电流 (ID):16 A最大漏源导通电阻:0.0066 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2.5 W最大脉冲漏极电流 (IDM):130 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF9317TRPBF 数据手册

 浏览型号IRF9317TRPBF的Datasheet PDF文件第2页浏览型号IRF9317TRPBF的Datasheet PDF文件第3页浏览型号IRF9317TRPBF的Datasheet PDF文件第4页浏览型号IRF9317TRPBF的Datasheet PDF文件第5页浏览型号IRF9317TRPBF的Datasheet PDF文件第6页浏览型号IRF9317TRPBF的Datasheet PDF文件第7页 
PD - 97465  
IRF9317PbF  
HEXFET® Power MOSFET  
VDS  
-30  
6.6  
V
S
S
1
2
3
4
8
7
6
5
D
RDS(on) max  
(@VGS = -10V)  
m
D
D
D
RDS(on) max  
(@VGS = -4.5V)  
S
10.2  
31  
m
nC  
A
G
Qg (typical)  
SO-8  
ID  
-16  
(@TA = 25°C)  
Applications  
Charge and Discharge Switch for Notebook PC Battery Application  
Features and Benefits  
Features  
Resulting Benefits  
Industry-Standard SO8 Package  
Multi-Vendor Compatibility  
Environmentally Friendlier  
RoHS Compliant Containing no Lead, no Bromide and no Halogen  
Orderable part number  
Package Type  
Standard Pack  
Note  
Form  
Tube/Bulk  
Quantity  
95  
IRF9317PbF  
IRF9317TRPbF  
SO8  
SO8  
Tape and Reel  
4000  
Absolute Maximum Ratings  
Max.  
-30  
Parameter  
Units  
VDS  
Drain-to-Source Voltage  
V
± 20  
Gate-to-Source Voltage  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
V
GS  
-16  
I
I
I
@ TA = 25°C  
D
D
-13  
A
@ TA = 70°C  
-130  
DM  
2.5  
Power Dissipation  
P
P
@TA = 25°C  
@TA = 70°C  
D
D
W
W/°C  
°C  
1.6  
Power Dissipation  
0.02  
Linear Derating Factor  
-55 to + 150  
Operating Junction and  
T
T
J
Storage Temperature Range  
STG  
Notes  through † are on page 2  
www.irf.com  
1
3/5/10  

IRF9317TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF9317PBF INFINEON

类似代替

Charge and Discharge Switch for Notebook PC Battery Application

与IRF9317TRPBF相关器件

型号 品牌 获取价格 描述 数据表
IRF9321 INFINEON

获取价格

-30V 单个 P 通道 HEXFET Power MOSFET, 采用 SO-8 封装
IRF9321PBF INFINEON

获取价格

HEXFET Power MOSFET
IRF9321TR UMW

获取价格

种类:P-Channel;漏源电压(Vdss):-30V;持续漏极电流(Id)(在25°C
IRF9321TRPBF INFINEON

获取价格

Charge and Discharge Switch for Notebook PC Battery Application
IRF9328PBF INFINEON

获取价格

HEXFET Power MOSFET
IRF9328TR UMW

获取价格

种类:P-Channel;漏源电压(Vdss):-30V;持续漏极电流(Id)(在25°C
IRF9328TRPBF INFINEON

获取价格

Charge and Discharge Switch for Notebook PC Battery Application
IRF9332PBF INFINEON

获取价格

HEXFET Power MOSFET
IRF9332TRPBF INFINEON

获取价格

Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, M
IRF9333PBF INFINEON

获取价格

HEXFET Power MOSFET