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IRF9204PBF

更新时间： 2024-11-20 12:46:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 240K
描述
Advanced Process Technology, Ultra Low On-Resistance

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中文翻译

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IRF9204PBF 数据手册

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PD - 96277B  
IRF9204PbF  
HEXFET® Power MOSFET  
Features  
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
l 175°C Operating Temperature  
l Fast Switching  
D
VDSS = -40V  
l P-Channel  
l Fully Avalanche Rated  
l Lead-Free  
RDS(on) = 16mΩ  
G
ID = -74A  
Description  
S
This HEXFET® Power MOSFET utilizes advanced processing  
techniques to achieve extremely low on-resistance per silicon  
area. This benefit, combined with the fast switching speed  
and ruggedized device design that HEXFET Power MOSFETs  
are well known for, provides the designer with an extremely  
efficient and reliable device for use in a wide variety of  
applications.  
D
S
D
G
The TO-220 package is universally preferred for all  
commercial-industrial applications at power dissipation levels  
to approximately 50 watts. The low thermal resistance and low  
package cost of the TO-220 contribute to its wide acceptance  
throughout the industry.  
TO-220AB  
IRF9204PbF  
G
G a te  
D
S
D ra in  
S o u rce  
Absolute Maximum Ratings  
Parameter  
Max.  
-74  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)  
Pulsed Drain Current  
-53  
A
-56  
-300  
143  
0.95  
± 20  
270  
502  
PD @TC = 25°C  
Power Dissipation  
W
W/°C  
V
Linear Derating Factor  
VGS  
Gate-to-Source Voltage  
EAS (Thermally limited)  
Single Pulse Avalanche Energy  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
EAS (Tested )  
IAR  
See Fig.17a, 17b, 14, 15  
A
EAR  
TJ  
Repetitive Avalanche Energy  
mJ  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
°C  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
1.05  
–––  
Units  
Rθ  
Junction-to-Case  
JC  
RθCS  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
°C/W  
Rθ  
62  
JA  
www.irf.com  
1
05/23/11  
1234567

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