Datasheet > IRF9204PBF

IRF9204PBF

更新时间： 2024-10-02 12:46:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	240K
描述
Advanced Process Technology, Ultra Low On-Resistance

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF9204PBF 数据手册

PD - 96277B

IRF9204PbF

HEXFET^®Power MOSFET

Features

^lAdvanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

V_DSS= -40V

l P-Channel

l Fully Avalanche Rated

l Lead-Free

R_DS(on)= 16mΩ

I_D= -74A

Description

This HEXFET^®Power MOSFET utilizes advanced processing

techniques to achieve extremely low on-resistance per silicon

area. This benefit, combined with the fast switching speed

and ruggedized device design that HEXFET Power MOSFETs

are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of

applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation levels

to approximately 50 watts. The low thermal resistance and low

package cost of the TO-220 contribute to its wide acceptance

throughout the industry.

TO-220AB

IRF9204PbF

G a te

D ra in

S o u rce

Absolute Maximum Ratings

Parameter

Max.

-74

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current

-53

-56

-300

143

0.95

± 20

270

502

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

V_GS

Gate-to-Source Voltage

E_{AS (Thermally limited)}

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(Tested )

I_AR

See Fig.17a, 17b, 14, 15

E_AR

T_J

Repetitive Avalanche Energy

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

°C

300 (1.6mm from case )

10 lbf in (1.1N m)

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter

Typ.

–––

Max.

1.05

–––

Units

R_θ

Junction-to-Case

R_θCS

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

R_θ

www.irf.com

05/23/11

12 3 4 5 6 7

中文翻译

下载PDF

与IRF9204PBF相关器件

型号	品牌	获取价格	描述	数据表
IRF9230	SAMSUNG	获取价格	P-CHANNEL POWER MOSFETS
IRF9230	SEME-LAB	获取价格	P-CHANNEL POWER MOSFET
IRF9230	INTERSIL	获取价格	-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs
IRF9230	INFINEON	获取价格	TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
IRF9230	VISHAY	获取价格	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Met
IRF9230	NJSEMI	获取价格	Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) TO-3
IRF9230E	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me
IRF9230EA	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me
IRF9230EAPBF	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me
IRF9230EBPBF	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me