Datasheet > IRF9230EDPBF

IRF9230EDPBF

更新时间： 2024-11-20 21:03:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	881K
描述
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF9230EDPBF 数据手册

PD- 90548E

IRF9230

JANTX2N6806

JANTXV2N6806

200V, P-CHANNEL

REF: MIL-PRF-19500/562

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTORS

THRU-HOLE (TO-204AA)

Product Summary

Part Number

BV_DSS

RDS(on)

I_D

IRF9230

-200V

-6.5A

0.80

TO-3 (TO-204AA)

Description

Features

HEXFET^®MOSFET technology is the key to IR Hirel advanced

line of power MOSFET transistors. The efficient geometry and

unique processing of this latest “State of the Art” design

achieves: very low on-state resistance combined with high trans

conductance; superior reverse energy and diode recovery dv/dt

capability.

 Repetitive Avalanche Ratings

 Dynamic dv/dt Rating

 Hermetically Sealed

 Simple Drive Requirements

 ESD Rating: Class 1C per MIL-STD-750,

Method 1020

The HEXFET transistors also feature all of the well established

advantages of MOSFETs such as voltage control, very fast

switching and temperature stability of the electrical parameters.

They are well suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio amplifiers

and high energy pulse circuits.

Absolute Maximum Ratings

Symbol

Value

Parameter

Units

I_D1@ V_GS= -10V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= -10V, T_C= 100°C Continuous Drain Current

-6.5

-4.0

-26

I_DM@T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

Maximum Power Dissipation

W/°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

0.60

± 20

181

-6.5

7.5

V_GS

E_AS

I_AR

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery 

Operating Junction and

Storage Temperature Range

Lead Temperature

V/ns

-5.0

-55 to + 150

T_STG

°C

300 (0.063 in. (1.6mm) from case for 10s)

11.5 (Typical)

Weight

For footnotes refer to the page 2.

2019-07-08

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7

中文翻译

下载PDF

与IRF9230EDPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF9230EPBF	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me
IRF9230PBF	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me
IRF9231	INTERSIL	获取价格	-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs
IRF9231	SAMSUNG	获取价格	P-CHANNEL POWER MOSFETS
IRF9231	ROCHESTER	获取价格	6.5A, 150V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF9231	NJSEMI	获取价格	HEXFET POWER MOSFETS
IRF9232	ROCHESTER	获取价格	5.5A, 200V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF9232	SAMSUNG	获取价格	P-CHANNEL POWER MOSFETS
IRF9232	INTERSIL	获取价格	-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs
IRF9232	NJSEMI	获取价格	HEXFET POWER MOSFETS