Datasheet > IRF9230

IRF9230

更新时间： 2024-10-01 22:31:39

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	76K
描述
-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs

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替代型号

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IRF9230 数据手册

Semiconductor

IRF9230, IRF9231,

IRF9232, IRF9233

-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm,

P-Channel Power MOSFETs

January 1998

Features

Description

• -5.5A and -6.5A, -150V and -200V

These devices are P-Channel enhancement mode silicon

gate power ﬁeld effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

speciﬁed level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching conver-

tors, motor drivers, relay drivers, and drivers for high power

bipolar switching transistors requiring high speed and low

gate drive power. These types can be operated directly from

integrated circuits.

• r

DS(ON)

= 0.8Ω and 1.2Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Formerly Developmental type TA17512.

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Ordering Information

PART NUMBER

IRF9230

PACKAGE

TO-204AA

BRAND

IRF9230

IRF9231

TO-204AA

IRF9231

IRF9232

IRF9233

IRF9232

IRF9233

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AA

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

File Number 2226.1

6-1

12 3 4 5 6 7

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IRF9230 替代型号

型号	品牌	替代类型	描述	数据表
IRF9230PBF	INFINEON	功能相似	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me
IRF9230	SEME-LAB	功能相似	P-CHANNEL POWER MOSFET

与IRF9230相关器件

型号	品牌	获取价格	描述	数据表
IRF9230E	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me
IRF9230EA	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me
IRF9230EAPBF	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me
IRF9230EBPBF	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me
IRF9230EC	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me
IRF9230ECPBF	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me
IRF9230ED	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me
IRF9230EDPBF	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me
IRF9230EPBF	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me
IRF9230PBF	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Me

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