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IRF9231 PDF预览

IRF9231

更新时间: 2024-11-19 22:31:39
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
7页 76K
描述
-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs

IRF9231 数据手册

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Semiconductor  
IRF9230, IRF9231,  
IRF9232, IRF9233  
-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm,  
P-Channel Power MOSFETs  
January 1998  
Features  
Description  
• -5.5A and -6.5A, -150V and -200V  
These devices are P-Channel enhancement mode silicon  
gate power field effect transistors. They are advanced power  
MOSFETs designed, tested, and guaranteed to withstand a  
specified level of energy in the breakdown avalanche mode  
of operation. All of these power MOSFETs are designed for  
applications such as switching regulators, switching conver-  
tors, motor drivers, relay drivers, and drivers for high power  
bipolar switching transistors requiring high speed and low  
gate drive power. These types can be operated directly from  
integrated circuits.  
• r  
DS(ON)  
= 0.8and 1.2Ω  
• Single Pulse Avalanche Energy Rated  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
Formerly Developmental type TA17512.  
• Related Literature  
- TB334, “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Symbol  
Ordering Information  
D
S
PART NUMBER  
IRF9230  
PACKAGE  
TO-204AA  
BRAND  
IRF9230  
G
IRF9231  
TO-204AA  
TO-204AA  
TO-204AA  
IRF9231  
IRF9232  
IRF9233  
IRF9232  
IRF9233  
NOTE: When ordering, use the entire part number.  
Packaging  
JEDEC TO-204AA  
DRAIN  
(FLANGE)  
SOURCE (PIN 2)  
GATE (PIN 1)  
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.  
File Number 2226.1  
Copyright © Harris Corporation 1997  
6-1  

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