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IRF625-009 PDF预览

IRF625-009

更新时间: 2024-11-12 05:29:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
1页 42K
描述
Power Field-Effect Transistor, 3.8A I(D), 250V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

IRF625-009 数据手册

  

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Power Field-Effect Transistor, 3.8A I(D), 250V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
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Power Field-Effect Transistor, 3.8A I(D), 250V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
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Power Field-Effect Transistor, 3.8A I(D), 250V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
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IRF626 ROCHESTER

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3.8A, 275V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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3.8A, 275V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB