Datasheet > IRF630

IRF630

更新时间： 2024-11-10 22:31:31

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
7页	66K
描述
9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs

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IRF630 数据手册

IRF630, RF1S630SM

Data Sheet

June 1999

File Number 1578.2

9A, 200V, 0.400 Ohm, N-Channel Power

MOSFETs

Features

• 9A, 200V

These are N-Channel enhancement mode silicon gate

power ﬁeld effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

speciﬁed level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

convertors, motor drivers, relay drivers, and drivers for high

power bipolar switching transistors requiring high speed and

low gate drive power. These types can be operated directly

from integrated circuits.

• r

= 0.400Ω

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA17412.

Ordering Information

Symbol

PART NUMBER

IRF630

RF1S630SM

PACKAGE

TO-220AB

TO-263AB

BRAND

IRF630

RF1S630

NOTE: When ordering, use the entire part number. Add the suffix 9A to

obtain the TO-263AB variant in the tape and reel, i.e., RF1S630SM9A.

Packaging

JEDEC TO-220AB

JEDEC TO-263AB

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

GATE

DRAIN (FLANGE)

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

4-202

12 3 4 5 6 7

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IRF630 替代型号

型号	品牌	替代类型	描述	数据表
IRF630	STMICROELECTRONICS	功能相似	N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET

与IRF630相关器件

型号	品牌	获取价格	描述	数据表
IRF630_06	STMICROELECTRONICS	获取价格	N-channel 200V - 0.35ヘ - 9A TO-220/TO-220FP M
IRF630-001	INFINEON	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
IRF630-001PBF	INFINEON	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
IRF630-006	NJSEMI	获取价格	Trans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK T/R
IRF630-010PBF	VISHAY	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
IRF630-012PBF	VISHAY	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
IRF630A	ISC	获取价格	isc N-Channel MOSFET Transistor
IRF630A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRF630A	MOTOROLA	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
IRF630A	NJSEMI	获取价格	Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220