IRF630

更新时间： 2024-11-11 05:39:27

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管场效应晶体管
页数	文件大小	规格书
1页	115K
描述
N-channel mosfet transistor

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中文翻译

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数据手册

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IRF630 数据手册

MOSFET

INCHANGE

IRF630

N-channel mosfet transistor

Features

1 2 3

·With TO-220 package

·Low on-state and thermal resistance

·Fast switching

·V_DSS=200V; R_DS(ON)≤0.4Ω;I_D=9A

·1.gate 2.drain 3.source

Absolute Maximum Ratings Tc=25℃

SYMBOL

V_DSS

V_GS

I_D

PARAMETER

Drain-source voltage (V_GS=0)

Gate-source voltage

RATING

200

UNIT

±20

Drain Current-continuous@ TC=25℃

Total Dissipation@TC=25℃

Max. Operating Junction temperature

Storage temperature

P_tot

T_j

150

℃

T_stg

-65~150

TO-220

Electrical Characteristics Tc=25℃

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_(BR)DSS

Drain-source breakdown voltage

V_GS=0; I_D=0.25mA

200

V_GS(TH)

R_DS(ON)

I_GSS

Gate threshold voltage

V_DS= V_GS; I_D=1mA

V_GS=10V; I_D=5.4A

V_GS=±20V;V_DS=0

V_DS=200V; V_GS=0

I_F=9A; V_GS=0

Drain-source on-stage resistance

Gate source leakage current

Zero gate voltage drain current

Diode forward voltage

400

±100

mΩ

I_DSS

V_SD

1.2

中文翻译

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与IRF630相关器件

型号	品牌	获取价格	描述	数据表
IRF630_06	STMICROELECTRONICS	获取价格	N-channel 200V - 0.35ヘ - 9A TO-220/TO-220FP M
IRF630-001	INFINEON	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
IRF630-001PBF	INFINEON	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
IRF630-006	NJSEMI	获取价格	Trans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK T/R
IRF630-010PBF	VISHAY	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
IRF630-012PBF	VISHAY	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
IRF630A	ISC	获取价格	isc N-Channel MOSFET Transistor
IRF630A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRF630A	MOTOROLA	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
IRF630A	NJSEMI	获取价格	Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220