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IRF5NJ5305SCX PDF预览

IRF5NJ5305SCX

更新时间: 2024-11-20 13:08:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
7页 120K
描述
Transistor,

IRF5NJ5305SCX 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:SMD-0.5, 3 PINReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.36
雪崩能效等级(Eas):160 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (Abs) (ID):22 A最大漏极电流 (ID):22 A
最大漏源导通电阻:0.065 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-XBCC-N3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):75 W
最大脉冲漏极电流 (IDM):88 A子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):130 ns最大开启时间(吨):151 ns
Base Number Matches:1

IRF5NJ5305SCX 数据手册

 浏览型号IRF5NJ5305SCX的Datasheet PDF文件第2页浏览型号IRF5NJ5305SCX的Datasheet PDF文件第3页浏览型号IRF5NJ5305SCX的Datasheet PDF文件第4页浏览型号IRF5NJ5305SCX的Datasheet PDF文件第5页浏览型号IRF5NJ5305SCX的Datasheet PDF文件第6页浏览型号IRF5NJ5305SCX的Datasheet PDF文件第7页 
PD - 94033  
HEXFET® POWER MOSFET  
SURFACE MOUNT (SMD-0.5)  
IRF5NJ5305  
55V, P-CHANNEL  
Product Summary  
Part Number  
BV  
RDS(on)  
ID  
DSS  
IRF5NJ5305  
-55V  
0.065-22A*  
Fifth Generation HEXFET® power MOSFETs from  
International Rectifier utilize advanced processing  
techniquestoachievethelowestpossibleon-resistance  
per silicon unit area. This benefit, combined with the  
fast switching speed and ruggedized device design  
that HEXFET power MOSFETs are well known for,  
providesthedesignerwithanextremelyefficientdevice  
for use in a wide variety of applications.  
SMD-0.5  
Features:  
n
n
n
n
n
n
n
n
Low RDS(on)  
Avalanche Energy Ratings  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
These devices are well-suited for applications such  
as switching power supplies, motor controls, invert-  
ers, choppers, audio amplifiers and high-energy pulse  
circuits.  
Light Weight  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= -10V, T = 25°C Continuous Drain Current  
-22*  
-16  
D
GS  
C
A
I
D
= -10V, T = 100°C Continuous Drain Current  
C
GS  
I
Pulsed Drain Current  
Max. Power Dissipation  
-88  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
Linear Derating Factor  
0.6  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
160  
mJ  
A
AS  
I
-16  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
2.8  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Package Mounting Surface Temperature  
Weight  
300 (for 5 s)  
1.0 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
11/10/00  

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