是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | SMD-0.5, 3 PIN | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.36 |
雪崩能效等级(Eas): | 160 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 55 V |
最大漏极电流 (Abs) (ID): | 22 A | 最大漏极电流 (ID): | 22 A |
最大漏源导通电阻: | 0.065 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-XBCC-N3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
最低工作温度: | -55 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 75 W |
最大脉冲漏极电流 (IDM): | 88 A | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 130 ns | 最大开启时间(吨): | 151 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF5NJ540 | INFINEON |
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POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.052ohm, Id=22A*) | |
IRF5NJ540PBF | INFINEON |
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Power Field-Effect Transistor, 22A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Me | |
IRF5NJ540SCV | INFINEON |
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100V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package - Screening Level TXV | |
IRF5NJ540SCX | INFINEON |
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IRF5NJ540SCX | |
IRF5NJ6215 | INFINEON |
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POWER MOSFET P-CHANNEL(Vdss=-150V, Rds(on)=0.29ohm, Id=-11A) | |
IRF5NJ9540 | INFINEON |
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POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A) | |
IRF5NJ9540SCS | INFINEON |
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-100V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package - Standard Packaging | |
IRF5NJ9540SCV | INFINEON |
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-100V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package - Screening Level TXV | |
IRF5NJ9540SCX | INFINEON |
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-100V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package - Screening Level TX | |
IRF5NJZ34 | INFINEON |
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HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) |