PD-94038B
IRF5NJ9540
HEXFET® POWER MOSFET
SURFACE MOUNT (SMD-0.5)
100V, P-CHANNEL
Product Summary
Part Number
BVDSS
RDS(on)
ID
IRF5NJ9540
-100V
-18A
0.117
SMD-0.5
Description
Features
Low RDS(on)
Fifth Generation HEXFET® power MOSFETs from IR HiRel
utilize advanced processing techniques to achieve the lowest
possible on-resistance per silicon unit area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device for
use in a wide variety of applications.
These devices are well-suited for applications such as
switching power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits.
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Hermetically Sealed
Surface Mount
Light Weight
ESD Rating: Class 2 per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Symbol
Value
-18
Parameter
Units
ID1 @ VGS = -10V, TC = 25°C Continuous Drain Current
ID2 @ VGS = -10V, TC = 100°C Continuous Drain Current
-11
A
IDM @ TC = 25°C
PD @TC = 25°C
Pulsed Drain Current
-72
W
W/°C
V
Maximum Power Dissipation
75
0.6
±20
260
-11
7.5
4.1
Linear Derating Factor
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
mJ
V/ns
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Package Mounting Surface Temp
Weight
-55 to + 150
TSTG
°C
g
300 (for 5s)
1.0 (Typical)
For Footnotes, refer to the page 2.
1
2019-03-08
International Rectifier HiRel Products, Inc.