Datasheet > IRF5NJ9540SCX

IRF5NJ9540SCX

更新时间： 2024-11-06 14:56:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	2202K
描述
-100V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package - Screening Level TX

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IRF5NJ9540SCX 数据手册

PD-94038B

IRF5NJ9540

HEXFET^®POWER MOSFET

SURFACE MOUNT (SMD-0.5)

100V, P-CHANNEL

Product Summary

Part Number

BV_DSS

RDS(on)

I_D

IRF5NJ9540

-100V

-18A

0.117

SMD-0.5

Description

Features

 Low RDS(on)

Fifth Generation HEXFET® power MOSFETs from IR HiRel

utilize advanced processing techniques to achieve the lowest

possible on-resistance per silicon unit area. This benefit,

combined with the fast switching speed and ruggedized device

design that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient device for

use in a wide variety of applications.

These devices are well-suited for applications such as

switching power supplies, motor controls, inverters, choppers,

audio amplifiers and high-energy pulse circuits.

 Avalanche Energy Ratings

 Dynamic dv/dt Rating

 Simple Drive Requirements

 Hermetically Sealed

 Surface Mount

 Light Weight

 ESD Rating: Class 2 per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

-18

Parameter

Units

I_D1@ V_GS= -10V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= -10V, T_C= 100°C Continuous Drain Current

-11

I_DM@ T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

-72

W/°C

Maximum Power Dissipation

0.6

±20

260

-11

7.5

4.1

Linear Derating Factor

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Package Mounting Surface Temp

Weight

-55 to + 150

T_STG

°C

300 (for 5s)

1.0 (Typical)

For Footnotes, refer to the page 2.

2019-03-08

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7

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