Datasheet > IRF423

IRF423

更新时间： 2024-11-17 22:51:35

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	73K
描述
2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs

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IRF423 数据手册

IRF420, IRF421,

IRF422, IRF423

Semiconductor

2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm,

N-Channel Power MOSFETs

July 1998

Features

Description

• 2.2A and 2.5A, 450V and 500V

• r = 3.0Ω and 4.0Ω

These are N-Channel enhancement mode silicon gate

power ﬁeld effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

speciﬁed level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching conver-

tors, motor drivers, relay drivers, and drivers for high power

bipolar switching transistors requiring high speed and low

gate drive power. These types can be operated directly from

integrated circuits.

DS(ON)

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

Formerly developmental type TA17405.

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Ordering Information

PART NUMBER

IRF420

PACKAGE

TO-204AA

BRAND

IRF420

IRF421

IRF422

IRF423

IRF421

IRF422

IRF423

TO-204AA

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AA

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

File Number 1571.3

5-1

12 3 4 5 6 7

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