Datasheet > IRF423

IRF423

更新时间： 2024-02-23 20:04:30

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	73K
描述
2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IRF423 技术参数

是否Rohs认证：	不符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	2.2 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	50 W	子类别：	FET General Purpose Power
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

IRF423 数据手册

IRF420, IRF421,

IRF422, IRF423

Semiconductor

2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm,

N-Channel Power MOSFETs

July 1998

Features

Description

• 2.2A and 2.5A, 450V and 500V

• r = 3.0Ω and 4.0Ω

These are N-Channel enhancement mode silicon gate

power ﬁeld effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

speciﬁed level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching conver-

tors, motor drivers, relay drivers, and drivers for high power

bipolar switching transistors requiring high speed and low

gate drive power. These types can be operated directly from

integrated circuits.

DS(ON)

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

Formerly developmental type TA17405.

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Ordering Information

PART NUMBER

IRF420

PACKAGE

TO-204AA

BRAND

IRF420

IRF421

IRF422

IRF423

IRF421

IRF422

IRF423

TO-204AA

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AA

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

File Number 1571.3

5-1

12 3 4 5 6 7

中文翻译

下载PDF

与IRF423相关器件

型号	品牌	获取价格	描述	数据表
IRF430	SEME-LAB	获取价格	N-CHANNEL POWER MOSFET
IRF430	INTERSIL	获取价格	4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET
IRF430	INFINEON	获取价格	TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)
IRF430	FAIRCHILD	获取价格	N-Channel Power MOSFETs, 4.5 A, 450V/500V
IRF430	NJSEMI	获取价格	Trans MOSFET N-CH 500V 4.5A 3-Pin(2+Tab) TO-204AA
IRF430	VISHAY	获取价格	Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF430	SAMSUNG	获取价格	N-CHANNEL POWER MOSFETS
IRF430-433	FAIRCHILD	获取价格	N-Channel Power MOSFETs, 4.5 A, 450V/500V
IRF430CHP	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRF430E	INFINEON	获取价格	Power Field-Effect Transistor, 4.5A I(D), 500V, 1.8ohm, 1-Element, N-Channel, Silicon, Met