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IRF3707ZSTRRPBF PDF预览

IRF3707ZSTRRPBF

更新时间: 2024-01-23 18:23:51
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
12页 376K
描述
Power Field-Effect Transistor, 42A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

IRF3707ZSTRRPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:LEAD FREE, PLASTIC, D2PAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.27
雪崩能效等级(Eas):40 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):42 A最大漏源导通电阻:0.0095 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):230 A
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON

IRF3707ZSTRRPBF 数据手册

 浏览型号IRF3707ZSTRRPBF的Datasheet PDF文件第2页浏览型号IRF3707ZSTRRPBF的Datasheet PDF文件第3页浏览型号IRF3707ZSTRRPBF的Datasheet PDF文件第4页浏览型号IRF3707ZSTRRPBF的Datasheet PDF文件第5页浏览型号IRF3707ZSTRRPBF的Datasheet PDF文件第6页浏览型号IRF3707ZSTRRPBF的Datasheet PDF文件第7页 
PD - 95333A  
IRF3707ZPbF  
IRF3707ZSPbF  
IRF3707ZLPbF  
Applications  
HEXFET® Power MOSFET  
l High Frequency Synchronous Buck  
Converters for Computer Processor Power  
l Lead-Free  
VDSS RDS(on) max  
Qg  
9.5m  
30V  
9.7nC  
Benefits  
l Low RDS(on) at 4.5V VGS  
l Ultra-Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
D2Pak  
TO-262  
TO-220AB  
IRF3707ZPbF  
IRF3707ZSPbF IRF3707ZLPbF  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
30  
Units  
V
VDS  
V
Gate-to-Source Voltage  
± 20  
59  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TC = 25°C  
A
D
D
42  
@ TC = 100°C  
230  
57  
DM  
P
P
@TC = 25°C  
Maximum Power Dissipation  
Maximum Power Dissipation  
W
D
D
@TC = 100°C  
28  
Linear Derating Factor  
Operating Junction and  
0.38  
-55 to + 175  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
300 (1.6mm from case)  
10 lbf in (1.1 N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
2.653  
–––  
62  
Units  
°C/W  
Rθ  
JC  
CS  
JA  
JA  
Junction-to-Case  
Rθ  
Rθ  
Rθ  
0.50  
–––  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
–––  
40  
Junction-to-Ambient (PCB Mount)  
Notes  through ‡ are on page 12  
www.irf.com  
1
05/08/08  

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