IRF3707ZSTRLPBF

更新时间： 2024-02-29 15:53:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	144K
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IRF3707ZSTRLPBF 数据手册

IRF3707/3707S/3707L

Static @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

30 ––– –––

––– 0.027 ––– V/°C Reference to 25°C, I_D= 1mA

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

V_GS= 0V, I_D= 250µA

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient

–––

––– 12.6 17

1.0 ––– 3.0

9.0 12.5

V_GS= 10V, I_D= 15A

R_DS(on)

V_GS(th)

I_DSS

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

mΩ

V_GS= 4.5V, I_D= 12A

V_DS= V_GS, I_D= 250µA

––– ––– 20

––– ––– 100

––– ––– 200

––– ––– -200

V_DS= 24V, V_GS= 0V

µA

Drain-to-Source Leakage Current

V_DS= 24V, V_GS= 0V, T_J= 125°C

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

V_GS= 16V

I_GSS

V_GS= -16V

Dynamic @ T_J= 25°C (unless otherwise specified)

Symbol

g_fs

Parameter

Forward Transconductance

Total Gate Charge

Min. Typ. Max. Units

Conditions

––– –––

19 –––

8.2 –––

6.3 –––

V_DS= 15V, I_D= 49.6A

I_D= 24.8A

Q_g

–––

Q_gs

Q_gd

Q_oss

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Output Gate Charge

Turn-On Delay Time

Rise Time

nC V_DS= 15V

V_GS= 4.5V

V_GS= 0V, V_DS= 15V

V_DD= 15V

8.5 –––

78 –––

I_D= 24.8A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

––– 11.8 –––

––– 3.3 –––

R_G= 1.8Ω

V_GS= 4.5V

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

––– 1990 –––

––– 707 –––

Output Capacitance

Reverse Transfer Capacitance

V_DS= 15V

–––

50 –––

ƒ = 1.0MHz

Avalanche Characteristics

Symbol

E_AS

Parameter

Single Pulse Avalanche Energy

Avalanche Current

Typ.

–––

Max.

213

Units

I_AR

Diode Characteristics

Symbol

I_S

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

(Body Diode)

MOSFET symbol

showing the

––– –––

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

248

––– 0.88 1.3

––– 0.8 –––

T_J= 25°C, I_S= 31A, V_GS= 0V

T_J= 125°C, I_S= 31A, V_GS= 0V

T_J= 25°C, I_F= 31A, V_R=20V

V_SD

Diode Forward Voltage

t_rr

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Time

Reverse Recovery Charge

––– 39

––– 49

––– 42

––– 62

Q_rr

t_rr

nC di/dt = 100A/µs

ns T_J= 125°C, I_F= 31A, V_R=20V

nC di/dt = 100A/µs

Q_rr

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