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IRF150 PDF预览

IRF150

更新时间: 2024-02-06 06:34:23
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
7页 61K
描述
40A, 100V, 0.055 Ohm, N-Channel Power MOSFET

IRF150 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active包装说明:CHIP CARRIER, R-CBCC-N3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.09
Is Samacsys:N雪崩能效等级(Eas):150 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):27 A
最大漏源导通电阻:0.081 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-CBCC-N3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):108 A认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

IRF150 数据手册

 浏览型号IRF150的Datasheet PDF文件第2页浏览型号IRF150的Datasheet PDF文件第3页浏览型号IRF150的Datasheet PDF文件第4页浏览型号IRF150的Datasheet PDF文件第5页浏览型号IRF150的Datasheet PDF文件第6页浏览型号IRF150的Datasheet PDF文件第7页 
IRF150  
Data Sheet  
March 1999  
File Number 1824.3  
40A, 100V, 0.055 Ohm, N-Channel  
Power MOSFET  
Features  
• 40A, 100V  
• r = 0.055  
This N-Channel enhancement mode silicon gate power field  
effect transistor is an advanced power MOSFET designed,  
tested, and guaranteed to withstand a specified level of  
energy in the breakdown avalanche mode of operation. All of  
these power MOSFETs are designed for applications such  
as switching regulators, switching convertors, motor drivers,  
relay drivers, and drivers for high power bipolar switching  
transistors requiring high speed and low gate drive power.  
These types can be operated directly from integrated  
circuits.  
DS(ON)  
• Single Pulse Avalanche Energy Rated  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
• Related Literature  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Formerly Developmental Type TA17421.  
Ordering Information  
Symbol  
PART NUMBER  
PACKAGE  
BRAND  
IRF150  
D
IRF150  
TO-204AE  
NOTE: When ordering, include the entire part number.  
G
S
Packaging  
JEDEC TO-204AE  
DRAIN  
(FLANGE)  
SOURCE (PIN 2)  
GATE (PIN 1)  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
1

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