Datasheet > IRF150

IRF150

更新时间： 2024-11-19 22:48:07

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	61K
描述
40A, 100V, 0.055 Ohm, N-Channel Power MOSFET

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IRF150 数据手册

IRF150

Data Sheet

March 1999

File Number 1824.3

40A, 100V, 0.055 Ohm, N-Channel

Power MOSFET

Features

• 40A, 100V

• r = 0.055Ω

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly Developmental Type TA17421.

Ordering Information

Symbol

PART NUMBER

PACKAGE

BRAND

IRF150

TO-204AE

NOTE: When ordering, include the entire part number.

Packaging

JEDEC TO-204AE

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

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IRF150 替代型号

型号	品牌	替代类型	描述	数据表
NTE2392	NTE	功能相似	MOSFET N-Channel Enhancement Mode, High Speed Switch
IRF150	INFINEON	功能相似	TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A)

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