Datasheet > IPU80R900P7

IPU80R900P7

更新时间： 2023-12-06 20:13:25

品牌	Logo	应用领域
英飞凌 - INFINEON		驱动驱动器
页数	文件大小	规格书
13页	1496K
描述
800V CoolMOS? P7超结MOSFET系列完全适合低功率SMPS应用，可完全满足性能，易用性和性价比等市场需求。它主要侧重于反激式应用，包括适配器和充电器，LED驱动器，音频SMPS，辅助和工业电源。

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IPU80R900P7 数据手册

800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor

IPU80R900P7

1ꢀꢀꢀꢀꢀMaximumꢀratings

atꢀT_jꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

3.9

T_C=25°C

Continuous drain current¹⁾

I_D

T_C=100°C

Pulsed drain current²⁾

I_D,pulse

E_AS

T_C=25°C

Avalanche energy, single pulse

Avalanche energy, repetitive

Avalanche current, repetitive

MOSFET dv/dt ruggedness

I_D=0.9A; V_DD=50V

E_AR

0.11

0.9

100

I_AR

dv/dt

V/ns V_DS=0ꢀtoꢀ400V

-20

-30

static;

Gate source voltage

V_GS

AC (f>1 Hz)

Power dissipation

P_tot

150

4.4

°C

T_C=25°C

Operating and storage temperature

Continuous diode forward current

Diode pulse current²⁾

Reverse diode dv/dt³⁾

Maximum diode commutation speed³⁾di_f/dt

T_j,ꢀT_stg

I_S

-55

T_C=25°C

I_S,pulse

dv/dt

V/ns V_DS=0ꢀtoꢀ400V,ꢀI_SD<=1.1A,ꢀT_j=25°C

A/µs V_DS=0ꢀtoꢀ400V,ꢀI_SD<=1.1A,ꢀT_j=25°C

2ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Typ.

Max.

2.8

Thermal resistance, junction - case

R_thJC

°C/W -

Thermal resistance, junction - ambient R_thJA

°C/W leaded

Thermal resistance, junction - ambient

for SMD version

R_thJA

°C/W n.a.

Soldering temperature, wavesoldering

only allowed at leads

T_sold

260

°C

1.6 mm (0.063 in.) from case for 10s

¹⁾Limited by T_{j max}. Maximum duty cycle D=0.5

²⁾Pulse width t_plimited by T_j,max

³⁾ꢀV_DClink=400V;ꢀV_DS,peak<V_(BR)DSS;ꢀidenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀR_G;ꢀꢀt_cond<2µs

Final Data Sheet

Rev.ꢀ2.2,ꢀꢀ2022-01-31

1 234 5 6 7...13

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