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IPU95R3K7P7 PDF预览

IPU95R3K7P7

更新时间: 2024-11-19 14:54:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
14页 1351K
描述
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS? P7 technology focuses on the low-power SMPS market.

IPU95R3K7P7 数据手册

 浏览型号IPU95R3K7P7的Datasheet PDF文件第2页浏览型号IPU95R3K7P7的Datasheet PDF文件第3页浏览型号IPU95R3K7P7的Datasheet PDF文件第4页浏览型号IPU95R3K7P7的Datasheet PDF文件第5页浏览型号IPU95R3K7P7的Datasheet PDF文件第6页浏览型号IPU95R3K7P7的Datasheet PDF文件第7页 
IPU95R3K7P7  
MOSFET  
IPAK  
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice  
Theꢀlatestꢀ950VꢀCoolMOS™ꢀP7ꢀseriesꢀsetsꢀaꢀnewꢀbenchmarkꢀinꢀ950V  
superꢀjunctionꢀtechnologiesꢀandꢀcombinesꢀbest-in-classꢀperformanceꢀwith  
stateꢀofꢀtheꢀartꢀease-of-use,ꢀresultingꢀfromꢀInfineon’sꢀoverꢀ18ꢀyears  
pioneeringꢀsuperꢀjunctionꢀtechnologyꢀinnovation.  
tab  
Features  
•ꢀBest-in-classꢀFOMꢀRDS(on)ꢀ*ꢀEoss;ꢀreducedꢀQg,ꢀCiss,ꢀandꢀCoss  
•ꢀBest-in-classꢀIPAKꢀRDS(on)  
1
2
3
•ꢀBest-in-classꢀV(GS)thꢀofꢀ3VꢀandꢀsmallestꢀꢀV(GS)thꢀvariationꢀofꢀ±0.5V  
•ꢀIntegratedꢀZenerꢀDiodeꢀESDꢀprotection  
•ꢀBest-in-classꢀCoolMOS™ꢀqualityꢀandꢀreliability  
•ꢀFullyꢀoptimizedꢀportfolio  
Drain  
Pin 2  
Benefits  
*1  
Gate  
Pin 1  
•ꢀBest-in-classꢀperformance  
*2  
•ꢀEnablingꢀhigherꢀpowerꢀdensityꢀdesigns,ꢀBOMꢀsavingsꢀandꢀlower  
assemblyꢀcosts  
•ꢀEasyꢀtoꢀdriveꢀandꢀtoꢀparallel  
Source  
Pin 3  
*1: Internal body diode  
*2: Integrated ESD diode  
•ꢀBetterꢀproductionꢀyieldꢀbyꢀreducingꢀESDꢀrelatedꢀfailures  
•ꢀLessꢀproductionꢀissuesꢀandꢀreducedꢀfieldꢀreturns  
•ꢀEasyꢀtoꢀselectꢀrightꢀpartsꢀforꢀfineꢀtuningꢀofꢀdesigns  
Potentialꢀapplications  
RecommendedꢀforꢀflybackꢀtopologiesꢀforꢀLEDꢀLighting,ꢀlowꢀpower  
ChargersꢀandꢀAdapters,ꢀSmartꢀMeter,ꢀAUXꢀpowerꢀandꢀIndustrialꢀpower.  
AlsoꢀsuitableꢀforꢀPFCꢀstageꢀinꢀConsumerꢀandꢀSolarꢀapplications.  
ProductꢀValidation:ꢀFullyꢀqualifiedꢀacc.ꢀJEDECꢀforꢀIndustrialꢀApplications  
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  
orꢀseperateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj=25°C  
RDS(on),max  
Qg,typ  
Value  
950  
3.7  
6
Unit  
V
nC  
A
ID  
2
Eoss @ 500V  
VGS(th),typ  
0.5  
3
µJ  
V
ESD class (HBM)  
1C  
-
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPU95R3K7P7  
PG-TO251-3  
95R3K7P7  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.1,ꢀꢀ2022-01-13  

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