Datasheet > IPU090N03LG

IPU090N03LG

更新时间： 2024-11-13 11:08:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	532K
描述
OptiMOS3 Power-Transistor

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中文翻译

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数据手册

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IPU090N03LG 数据手册

Type

IPD090N03L G

IPS090N03L G

IPF090N03L G

IPU090N03L G

OptiMOS^®3 Power-Transistor

Product Summary

Features

V _DS

• Fast switching MOSFET for SMPS

• Optimized technology for DC/DC converters

• Qualified according to JEDEC¹⁾for target applications

R _DS(on),max

I _D

mΩ

• N-channel, logic level

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• Avalanche rated

• Pb-free plating; RoHS compliant

Type

IPD090N03L G

IPF090N03L G

IPS090N03L G

IPU090N03L G

• Avalanche rated

• Pb-free plating; RoHS compliant

Package

Marking

PG-TO252-3-11

090N03L

PG-TO252-3-23

090N03L

PG-TO251-3-11

090N03L

PG-TO251-3-21

090N03L

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

_GS=10 V, T _C=25 °C

_GS=10 V, T _C=100 °C

_GS=4.5 V, T _C=25 °C

Continuous drain current

_GS=4.5 V,

T _C=100 °C

Pulsed drain current²⁾

I _D,pulse

I _AS

T _C=25 °C

280

Avalanche current, single pulse³⁾

T _C=25 °C

E _AS

I _D=12 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=40 A, V _DS=24 V,

di /dt =200 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

V _GS

Gate source voltage

¹⁾J-STD20 and JESD22

±20

Rev. 1.0

page 1

2006-10-23

12 3 4 5 6 7...12

中文翻译

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