IPU10N03LA

更新时间： 2024-09-24 21:54:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	413K
描述
OptiMOS2 Power-Transistor

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中文翻译

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数据手册

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IPU10N03LA 数据手册

IPD10N03LA IPF10N03LA

IPS10N03LA IPU10N03LA

OptiMOS^®2 Power-Transistor

Product Summary

Features

V _DS

• Ideal for high-frequency dc/dc converters

R _DS(on),max

I _D

10.4

mΩ

• Qualified according to JEDEC¹⁾for target application

• N-channel, logic level

• Excellent gate charge x R _DS(on)product (FOM)

• Superior thermal resistance

• 175 °C operating temperature

Type

IPD10N03LA

IPF10N03LA

IPS10N03LA

IPU10N03LA

Package

P-TO252-3-11

Q67042-S4238

10N03LA

P-TO252-3-23

Q67042-S4239

10N03LA

P-TO251-3-11

Q67042-S4247

10N03LA

P-TO251-3-21

Q67042-S4242

10N03LA

Ordering Code

Marking

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

T _C=25 °C²⁾

I _D

Continuous drain current

T _C=100 °C

T _C=25 °C³⁾

I _D,pulse

Pulsed drain current

210

E _AS

I _D=30 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=30 A, V _DS=20 V,

di /dt =200 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

Gate source voltage⁴⁾

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

Rev. 1.3

page 1

2004-05-19

12 3 4 5 6 7...11

中文翻译

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