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IPU135N08N3G PDF预览

IPU135N08N3G

更新时间: 2024-11-13 11:08:59
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 289K
描述
OptiMOS(TM)3 Power-Transistor

IPU135N08N3G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-251
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.82雪崩能效等级(Eas):40 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:80 V
最大漏极电流 (Abs) (ID):50 A最大漏极电流 (ID):50 A
最大漏源导通电阻:0.0135 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-251JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):79 W
最大脉冲漏极电流 (IDM):200 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IPU135N08N3G 数据手册

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IPU135N08N3 G  
OptiMOS(TM)3 Power-Transistor  
Product Summary  
Features  
V DS  
80  
13.5  
50  
V
• Ideal for high frequency switching and sync. rec.  
• Optimized technology for DC/DC converters  
• Excellent gate charge x R DS(on) product (FOM)  
R DS(on),max  
I D  
m  
A
• N-channel, normal level  
• 100% avalanche tested  
• Pb-free plating; RoHS compliant  
• Qualified according to JEDEC1) for target applications  
Type  
IPU135N08N3 G  
1
2
3
Package  
Marking  
PG-TO251-3  
135N08N  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
T C=25 °C2)  
I D  
Continuous drain current  
50  
39  
A
T C=100 °C  
Pulsed drain current2)  
I D,pulse  
E AS  
T C=25 °C  
200  
Avalanche energy, single pulse3)  
I D=50 A, R GS=25 Ω  
40  
mJ  
V
V GS  
Gate source voltage  
±20  
P tot  
T C=25 °C  
Power dissipation  
79  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
1)J-STD20 and JESD22  
2) See figure 3 for more detailed information  
3) See figure 13 for more detailed information  
Rev. 2.1  
page 1  
2008-11-04  

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