Datasheet > IPS0551T(TO220)

IPS0551T(TO220)

更新时间： 2024-11-11 23:58:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
10页	107K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 37V V(BR)DSS \| TO-273AA

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IPS0551T(TO220) 数据手册

Data Sheet No. PD60160-B

IPS0551T

FULLY PROTECTED POWER MOSFET SWITCH

Product Summary

Features

• Over temperature shutdown

• Over current shutdown

• Active clamp

• Low current & logic level input

• E.S.D protection

6.0mΩ (max)

ds(on)

clamp

40V

Ishutdown

100A

Description

T T

on/ off

4µs

The IPS0551T is a fully protected three terminal SMART

POWER MOSFET that features over-current, over-tem-

perature, ESD protection, and drain to source active

clamp. This device combines a HEXFET POWER

MOSFET and a gate driver. It offers full protection and

high reliability required in harsh environments. The driver

allows short switching times and provides efficient protec-

tionbyturningOFFthepowerMOSFETwhentemperature

exceeds 165^oC or when the drain current reaches 100A.

The device restarts once the input is cycled. The ava-

lanche capability is significantly enhanced by the active

clamp and covers most inductive load demagnetiza-

tions.

Package

SUPER SMD220

SUPER TO220

Typical Connection

L o a d

in s e rie s

( if n e e d e d )

c o n tr o l

L o g ic s ig n a l

(Refer to lead assignment for correct pin configuration)

www.irf.com

12 3 4 5 6 7...10

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