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IPS06N03LBG

更新时间: 2024-11-12 21:10:03
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
11页 395K
描述
Power Field-Effect Transistor, 50A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, TO-251, 3 PIN

IPS06N03LBG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-251AA
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.76其他特性:LOGIC LEVEL COMPATIBLE
雪崩能效等级(Eas):160 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):50 A
最大漏源导通电阻:0.0063 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-251AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):200 A
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IPS06N03LBG 数据手册

 浏览型号IPS06N03LBG的Datasheet PDF文件第2页浏览型号IPS06N03LBG的Datasheet PDF文件第3页浏览型号IPS06N03LBG的Datasheet PDF文件第4页浏览型号IPS06N03LBG的Datasheet PDF文件第5页浏览型号IPS06N03LBG的Datasheet PDF文件第6页浏览型号IPS06N03LBG的Datasheet PDF文件第7页 
IPD06N03LB G  
IPU06N03LB G  
IPS06N03LB G  
IPF06N03LB G  
OptiMOS®2 Power-Transistor  
Product Summary  
Features  
V DS  
30  
6.1  
50  
V
• Ideal for high-frequency dc/dc converters  
• Qualified according to JEDEC1) for target applications  
R DS(on),max  
I D  
m  
A
• N-channel, logic level  
• Excellent gate charge x R DS(on) product (FOM)  
• Superior thermal resistance  
• 175 °C operating temperature  
• Pb-free lead plating; RoHS compliant  
Type  
IPD06N03LB G  
IPS06N03LB G  
IPF06N03LB G  
IPU06N03LB G  
Package  
PG-TO252-3-11  
PG-TO251-3-11  
PG-TO252-3-23  
Onrequest  
06N03LB  
PG-TO251-3-1  
On request  
06N03LB  
Ordering Code  
Marking
Q67042-S4263  
Onrequest
06N03LB06N03LB
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
T C=25 °C2)  
I D  
Continuous drain current  
50  
50  
A
T C=100 °C  
T C=25 °C3)  
I D,pulse  
Pulsed drain current  
200  
160  
E AS  
I D=50 A, R GS=25 Ω  
Avalanche energy, single pulse  
mJ  
I D=50 A, V DS=20 V,  
di /dt =200 A/µs,  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
T
j,max=175 °C  
Gate source voltage4)  
V GS  
±20  
83  
V
P tot  
T C=25 °C  
Power dissipation  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
Rev. 1.3  
page 1  
2005-07-18  

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