生命周期: | Active | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.76 | 其他特性: | LOGIC LEVEL COMPATIBLE |
雪崩能效等级(Eas): | 225 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 25 V | 最大漏极电流 (ID): | 50 A |
最大漏源导通电阻: | 0.0096 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-251AA | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 350 A |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPS06N03LB | INFINEON |
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OptiMOS㈢2 Power-Transistor |
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IPS06N03LBG | INFINEON |
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Power Field-Effect Transistor, 50A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me |
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IPS06N03LZ | INFINEON |
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Ideal for high-frequency dc/dc converters |
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IPS06N03LZG | INFINEON |
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Ideal for high-frequency dc/dc converters |
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IPS075N03LG | INFINEON |
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OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated |
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IPS090N03LG | INFINEON |
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OptiMOS®3 Power-Transistor Features Fast swit |
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IPS09N03LA | INFINEON |
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OptiMOS 2 Power-Transistor |
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IPS09N03LAG | INFINEON |
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OptiMOS㈢2 Power-Transistor |
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IPS09N03LBG | INFINEON |
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OptiMOS㈢2 Power-Transistor |
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IPS1011 | INFINEON |
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INTELLIGENT POWER LOW SIDE SWITCH |
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