是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 1 week |
风险等级: | 5.64 | 其他特性: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
雪崩能效等级(Eas): | 700 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 70 A | 最大漏源导通电阻: | 0.025 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 280 A |
表面贴装: | NO | 端子面层: | Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPP70N12S3-11 | INFINEON |
获取价格 |
Power Field-Effect Transistor | |
IPP70N12S311AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 120V, 0.0116ohm, 1-Element, N-Channel, Silicon, M | |
IPP70N12S3L-12 | INFINEON |
获取价格 |
Power Field-Effect Transistor | |
IPP70N12S3L12AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 120V, 0.0158ohm, 1-Element, N-Channel, Silicon, M | |
IPP70P04P4-09 | INFINEON |
获取价格 |
OptiMOS-P2 Power-Transistor | |
IPP77N06S2-12 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
IPP77N06S212AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 77A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met | |
IPP77N06S212AKSA2 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 77A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met | |
IPP77N06S3-09 | INFINEON |
获取价格 |
OptiMOS㈢-T Power-Transistor | |
IPP77N06S309AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 77A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Me |