5秒后页面跳转
IPP70N10SL16AKSA1 PDF预览

IPP70N10SL16AKSA1

更新时间: 2024-11-05 19:57:27
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网脉冲晶体管
页数 文件大小 规格书
8页 125K
描述
Power Field-Effect Transistor, 70A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

IPP70N10SL16AKSA1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:5.64其他特性:AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
雪崩能效等级(Eas):700 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):70 A最大漏源导通电阻:0.025 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):280 A
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

IPP70N10SL16AKSA1 数据手册

 浏览型号IPP70N10SL16AKSA1的Datasheet PDF文件第2页浏览型号IPP70N10SL16AKSA1的Datasheet PDF文件第3页浏览型号IPP70N10SL16AKSA1的Datasheet PDF文件第4页浏览型号IPP70N10SL16AKSA1的Datasheet PDF文件第5页浏览型号IPP70N10SL16AKSA1的Datasheet PDF文件第6页浏览型号IPP70N10SL16AKSA1的Datasheet PDF文件第7页 
IPI70N10SL-16  
IPP70N10SL-16, IPB70N10SL-16  
SIPMOS Power-Transistor  
Product Summary  
Feature  
V
100  
16  
V
DS  
N-Channel  
R
mΩ  
A
DS(on)  
Enhancement mode  
Logic Level  
I
70  
D
P-TO262-3-1  
P-TO263-3-2  
P-TO220-3-1  
175°C operating temperature  
Avalanche rated  
dv/dt rated  
2
3
2
• Green Package  
(lead free)  
1
P-TO220-3-1  
Type  
Package  
Ordering Code  
Marking  
N10L16  
N10L16  
N10L-16  
IPP70N10SL-16  
PG-TO220-3-1 SP0002-25708  
PG-TO263-3-2 SP0002-25700  
PG-TO262-3-1 SP000225705  
IPB70N10SL-16  
IPI70N10SL-16  
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T =25°C  
70  
C
TC=100°C  
50  
280  
Pulsed drain current  
I
D puls  
T =25°C  
C
700  
mJ  
Avalanche energy, single pulse  
E
AS  
I =70 A , V =25V, R =25Ω  
D DD GS  
E
25  
6
Avalanche energy, periodic limited by T  
AR  
jmax  
Reverse diode dv/dt  
dv/dt  
kV/µs  
I =70A, V =0V, di/dt=200A/µs  
S DS  
Gate source voltage  
Power dissipation  
V
V
20  
GS  
P
250  
W
tot  
T =25°C  
C
°C  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
T , T  
-55... +175  
55/175/56  
j
stg  
Page 1  
2006-02-14  

与IPP70N10SL16AKSA1相关器件

型号 品牌 获取价格 描述 数据表
IPP70N12S3-11 INFINEON

获取价格

Power Field-Effect Transistor
IPP70N12S311AKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 70A I(D), 120V, 0.0116ohm, 1-Element, N-Channel, Silicon, M
IPP70N12S3L-12 INFINEON

获取价格

Power Field-Effect Transistor
IPP70N12S3L12AKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 70A I(D), 120V, 0.0158ohm, 1-Element, N-Channel, Silicon, M
IPP70P04P4-09 INFINEON

获取价格

OptiMOS-P2 Power-Transistor
IPP77N06S2-12 INFINEON

获取价格

OptiMOS Power-Transistor
IPP77N06S212AKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 77A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
IPP77N06S212AKSA2 INFINEON

获取价格

Power Field-Effect Transistor, 77A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
IPP77N06S3-09 INFINEON

获取价格

OptiMOS㈢-T Power-Transistor
IPP77N06S309AKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 77A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Me