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IPD70N10S3L-12 PDF预览

IPD70N10S3L-12

更新时间: 2024-02-26 09:18:39
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲
页数 文件大小 规格书
9页 183K
描述
OptiMOS-T Power-Transistor

IPD70N10S3L-12 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:1.64雪崩能效等级(Eas):410 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):70 A最大漏极电流 (ID):70 A
最大漏源导通电阻:0.0152 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):125 W
最大脉冲漏极电流 (IDM):280 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

IPD70N10S3L-12 数据手册

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IPD70N10S3L-12  
OptiMOS®-T Power-Transistor  
Product Summary  
VDS  
100  
11.5  
70  
V
R DS(on),max  
I D  
m  
A
Features  
• N-channel - Enhancement mode  
PG-TO252-3-11  
• Automotive AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
IPD70N10S3L-12  
PG-TO252-3-11 QN10L12  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
I D  
T C=25°C, VGS=10V  
Continuous drain current  
70  
A
T C=100°C, VGS=10V1)  
48  
Pulsed drain current1)  
I D,pulse  
EAS  
T C=25°C  
I D=35A  
280  
410  
Avalanche energy, single pulse1)  
Avalanche current, single pulse  
Gate source voltage  
mJ  
A
I AS  
70  
VGS  
±16  
V
Ptot  
T C=25 °C  
Power dissipation  
125  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... +175  
55/175/56  
Rev. 1.0  
page 1  
2008-02-12  

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