Datasheet > IPD60R180C7

IPD60R180C7

更新时间： 2024-02-16 21:19:21

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
15页	1177K
描述
Metal Oxide Semiconductor Field Effect Transistor

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中文翻译

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数据手册

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IPD60R180C7 数据手册

600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor

IPD60R180C7

2ꢀꢀꢀꢀꢀMaximumꢀratings

atꢀT_jꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Typ.

Max.

T_C=25°C

Continuous drain current¹⁾

I_D

T_C=100°C

Pulsed drain current²⁾

I_D,pulse

E_AS

E_AR

I_AS

T_C=25°C

Avalanche energy, single pulse

Avalanche energy, repetitive

Avalanche current, single pulse

MOSFET dv/dt ruggedness

Gate source voltage (static)

Gate source voltage (dynamic)

Power dissipation

I_D=3.3A; V_DD=50V; see table 10

0.26

3.3

120

I_D=3.3A; V_DD=50V; see table 10

dv/dt

V_GS

P_tot

T_stg

T_j

V/ns V_DS=0...400V

-20

-30

static;

AC (f>1 Hz)

°C

T_C=25°C

Storage temperature

-55

150

n.a.

Operating junction temperature

Mounting torque

Ncm -

Continuous diode forward current

Diode pulse current²⁾

I_S

T_C=25°C

I_S,pulse

T_C=25°C

V_DS=0...400V,ꢀI_SD<=5.2A,ꢀT_j=25°Cꢀꢀꢀꢀ

Reverse diode dv/dt³⁾

dv/dt

V/ns

see table 8

V_DS=0...400V,ꢀI_SD<=5.2A,ꢀT_j=25°Cꢀꢀꢀꢀ

Maximum diode commutation speed

Insulation withstand voltage

di_f/dt

350

n.a.

A/µs

see table 8

V_ISO

V_rms,ꢀT_C=25°C,ꢀt=1min

¹⁾Limited by T_{j max}

²⁾Pulse width t_plimited by T_j,max

³⁾Identical low side and high side switch

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2015-08-10

1 2 345 6 7...15

中文翻译

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