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IPD30N03S4L-14 PDF预览

IPD30N03S4L-14

更新时间: 2024-11-06 05:39:23
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 187K
描述
OptiMOS-T2 Power-Transistor

IPD30N03S4L-14 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:1.1雪崩能效等级(Eas):16 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):30 A
最大漏极电流 (ID):30 A最大漏源导通电阻:0.0136 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):31 W
最大脉冲漏极电流 (IDM):120 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

IPD30N03S4L-14 数据手册

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IPD30N03S4L-14  
OptiMOS®-T2 Power-Transistor  
Product Summary  
VDS  
30  
13.6  
30  
V
R DS(on),max  
I D  
m  
A
Features  
• N-channel - Enhancement mode  
PG-TO252-3-11  
• Automotive AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green product (RoHS compliant)  
• Ultra low Rds(on)  
• 100% Avalanche tested  
Type  
Package  
Marking  
IPD70N03S4L-04  
PG-TO252-3-11 4N03L04  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25 °C, VGS=10 V  
T C=100 °C,  
30  
A
27  
V
GS=10 V2)  
Pulsed drain current2)  
I D,pulse  
EAS  
T C=25 °C  
I D=30 A  
120  
16  
Avalanche energy, single pulse  
Avalanche current, single pulse  
Gate source voltage  
mJ  
A
I AS  
T C=25 °C  
30  
VGS  
±16  
V
Ptot  
T C=25 °C  
Power dissipation  
31  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... +175  
55/175/56  
Rev. 2.0  
page 1  
2007-05-22  

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