是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-252 |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 1.1 | 雪崩能效等级(Eas): | 16 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 30 A |
最大漏极电流 (ID): | 30 A | 最大漏源导通电阻: | 0.0136 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-252 |
JESD-30 代码: | R-PSSO-G2 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 31 W |
最大脉冲漏极电流 (IDM): | 120 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPD30N06S2-15 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
IPD30N06S215ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 30A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Me | |
IPD30N06S215ATMA2 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 30A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Me | |
IPD30N06S2-23 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
IPD30N06S223ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 30A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Met | |
IPD30N06S2L-13 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
IPD30N06S2L13ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 30A I(D), 55V, 0.017ohm, 1-Element, N-Channel, Silicon, Met | |
IPD30N06S2L13ATMA4 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 30A I(D), 55V, 0.017ohm, 1-Element, N-Channel, Silicon, Met | |
IPD30N06S2L-23 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
IPD30N06S3-24 | INFINEON |
获取价格 |
OptiMOS-T Power-Transistor |