Datasheet > IPB70N10SL-16

IPB70N10SL-16

更新时间： 2024-11-18 11:08:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	125K
描述
SIPMOS Power-Transistor

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中文翻译

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数据手册
替代型号

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IPB70N10SL-16 数据手册

IPI70N10SL-16

IPP70N10SL-16, IPB70N10SL-16



SIPMOS Power-Transistor

Product Summary

Feature

100

• N-Channel

mΩ

DS(on)

• Enhancement mode

• Logic Level

P-TO262-3-1

P-TO263-3-2

P-TO220-3-1

• 175°C operating temperature

• Avalanche rated

• dv/dt rated

• Green Package

(lead free)

P-TO220-3-1

Type

Package

Ordering Code

Marking

N10L16

N10L-16

IPP70N10SL-16

PG-TO220-3-1 SP0002-25708

PG-TO263-3-2 SP0002-25700

PG-TO262-3-1 SP000225705

IPB70N10SL-16

IPI70N10SL-16

Maximum Ratings, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T =25°C

TC=100°C

280

Pulsed drain current

D puls

T =25°C

700

Avalanche energy, single pulse

I =70 A , V =25V, R =25Ω

D DD GS

Avalanche energy, periodic limited by T

jmax

Reverse diode dv/dt

dv/dt

kV/µs

I =70A, V =0V, di/dt=200A/µs

S DS

Gate source voltage

Power dissipation

250

tot

T =25°C

°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

T , T

-55... +175

55/175/56

stg

Page 1

2006-02-14

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中文翻译

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IPB70N10SL-16 替代型号

型号	品牌	替代类型	描述	数据表
IPB70N10S3-12	INFINEON	类似代替	OptiMOS-T Power-Transistor
IPD70N10S3-12	INFINEON	功能相似	OptiMOS-T Power-Transistor
IPB70N10S3L-12	INFINEON	功能相似	OptiMOS-T Power-Transistor

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