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IPB70N10SL-16 PDF预览

IPB70N10SL-16

更新时间: 2024-11-05 11:08:43
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 125K
描述
SIPMOS Power-Transistor

IPB70N10SL-16 数据手册

 浏览型号IPB70N10SL-16的Datasheet PDF文件第2页浏览型号IPB70N10SL-16的Datasheet PDF文件第3页浏览型号IPB70N10SL-16的Datasheet PDF文件第4页浏览型号IPB70N10SL-16的Datasheet PDF文件第5页浏览型号IPB70N10SL-16的Datasheet PDF文件第6页浏览型号IPB70N10SL-16的Datasheet PDF文件第7页 
IPI70N10SL-16  
IPP70N10SL-16, IPB70N10SL-16  
SIPMOS Power-Transistor  
Product Summary  
Feature  
V
100  
16  
V
DS  
N-Channel  
R
mΩ  
A
DS(on)  
Enhancement mode  
Logic Level  
I
70  
D
P-TO262-3-1  
P-TO263-3-2  
P-TO220-3-1  
175°C operating temperature  
Avalanche rated  
dv/dt rated  
2
3
2
• Green Package  
(lead free)  
1
P-TO220-3-1  
Type  
Package  
Ordering Code  
Marking  
N10L16  
N10L16  
N10L-16  
IPP70N10SL-16  
PG-TO220-3-1 SP0002-25708  
PG-TO263-3-2 SP0002-25700  
PG-TO262-3-1 SP000225705  
IPB70N10SL-16  
IPI70N10SL-16  
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T =25°C  
70  
C
TC=100°C  
50  
280  
Pulsed drain current  
I
D puls  
T =25°C  
C
700  
mJ  
Avalanche energy, single pulse  
E
AS  
I =70 A , V =25V, R =25Ω  
D DD GS  
E
25  
6
Avalanche energy, periodic limited by T  
AR  
jmax  
Reverse diode dv/dt  
dv/dt  
kV/µs  
I =70A, V =0V, di/dt=200A/µs  
S DS  
Gate source voltage  
Power dissipation  
V
V
20  
GS  
P
250  
W
tot  
T =25°C  
C
°C  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
T , T  
-55... +175  
55/175/56  
j
stg  
Page 1  
2006-02-14  

IPB70N10SL-16 替代型号

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