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IPB70N04S307ATMA1 PDF预览

IPB70N04S307ATMA1

更新时间: 2024-11-18 14:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON 脉冲晶体管
页数 文件大小 规格书
9页 186K
描述
Power Field-Effect Transistor, 82A I(D), 40V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3

IPB70N04S307ATMA1 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:GREEN, PLASTIC PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.7Is Samacsys:N
其他特性:ULTRA LOW RESISTANCE雪崩能效等级(Eas):145 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (ID):82 A
最大漏源导通电阻:0.006 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):280 A
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

IPB70N04S307ATMA1 数据手册

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IPB70N04S3-07  
IPI70N04S3-07, IPP70N04S3-07  
OptiMOS®-T Power-Transistor  
Product Summary  
VDS  
40  
6.2  
80  
V
R
DS(on),max (SMD version)  
m  
A
I D  
Features  
• N-channel - Enhancement mode  
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1  
• Automotive AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green package (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
3N0407  
3N0407  
3N0407  
IPB70N04S3-07  
IPI70N04S3-07  
IPP70N04S3-07  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
T C=25 °C, VGS=10 V1)  
I D  
Continuous drain current  
80  
A
T C=100 °C,  
V
58  
GS=10 V2)  
Pulsed drain current2)  
I D,pulse  
EAS  
T C=25 °C  
I D=50 A  
280  
145  
Avalanche energy, single pulse  
Gate source voltage  
mJ  
V
VGS  
±20  
Ptot  
T C=25 °C  
Power dissipation  
79  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... +175  
55/175/56  
Rev. 1.0  
page 1  
2007-05-03  

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