是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | D2PAK |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 4 |
Reach Compliance Code: | not_compliant | 风险等级: | 8.43 |
雪崩能效等级(Eas): | 115 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 650 V |
最大漏极电流 (ID): | 6 A | 最大漏源导通电阻: | 0.66 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 17 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPB70N04S3-07 | INFINEON |
获取价格 |
OptiMOS-T Power-Transistor | |
IPB70N04S307ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 82A I(D), 40V, 0.006ohm, 1-Element, N-Channel, Silicon, Met | |
IPB70N04S4-06 | INFINEON |
获取价格 |
OptiMOS-T2 Power-Transistor | |
IPB70N10S3-12 | INFINEON |
获取价格 |
OptiMOS-T Power-Transistor | |
IPB70N10S312ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 100V, 0.0113ohm, 1-Element, N-Channel, Silicon, M | |
IPB70N10S3L-12 | INFINEON |
获取价格 |
OptiMOS-T Power-Transistor | |
IPB70N10S3L12ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Me | |
IPB70N10SL-16 | INFINEON |
获取价格 |
SIPMOS Power-Transistor | |
IPB70N10SL16ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me | |
IPB70N12S3-11 | INFINEON |
获取价格 |
Power Field-Effect Transistor |