Datasheet > IMD14

IMD14

更新时间： 2024-09-07 22:33:47

品牌	Logo	应用领域
罗姆 - ROHM		晶体数字晶体管
页数	文件大小	规格书
1页	51K
描述
IMD14 General purpose dual digital transistors

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中文翻译

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IMD14 数据手册

IMD14

Transistors

IMD14 General purpose

(dual digital transistors)

IMD14

!Features

!External dimensions (Units : mm)

1) Two 500 mA digital transistor chips in a SMT package.

2) The drive transistors are independent, eliminating

interference.

1.6

2.8

!Absolute maximum ratings (Ta = 25°C)

0.3to0.6

Parameter

Symbol

Limits

Unit

Each lead has same dimensions

Supply voltage

ROHM : SMT6

EIAJ : SC-74

−5

Input voltage

˚C

500

Output current

300 (TOTAL)

150

Power dissipation

Junction temperature

Storage temperature

Tstg

−55~+150

˚C

200mW per element must not be exceeded. PNP type negative symbols have been omitted.

!Packaging specifications and h^FE

Part No.

Package

Marking

IMD14

SMT6

D14

Code

T108

3000

Basic ordering unit (pieces)

!Circuit diagram

!Electrical characteristics (Ta = 25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

I (off)

I (on)

−

1.1

−

0.3

−

0.3

0.5

−

CC=5V , I

=0.3V , I

/I =100mA/5mA

=3V

CC=50V , V

=100mA , V

=100µA

Input voltage

=1mA

O (on)

µA

−

MHz

Ω

IO I

Output voltage

Input current

O (off)

=0V

=5V

Output current

DC current gain

Transition frequency

Input resistance

Resistance ratio

−

250

220

45.5

−

286

CE=10V , I

=−50mA , f=100MHz

154

−

R2/R1

36.3

54.6

−

1 Measured using pulse current

PNP type negative symbols have been omitted.

2 Transition frequency of the device

中文翻译

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