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IMD23 PDF预览

IMD23

更新时间: 2024-09-07 22:33:47
品牌 Logo 应用领域
罗姆 - ROHM 晶体数字晶体管
页数 文件大小 规格书
5页 82K
描述
General purpose (dual digital transistors)

IMD23 数据手册

 浏览型号IMD23的Datasheet PDF文件第2页浏览型号IMD23的Datasheet PDF文件第3页浏览型号IMD23的Datasheet PDF文件第4页浏览型号IMD23的Datasheet PDF文件第5页 
IMD23  
Transistors  
General purpose  
(dual digital transistors)  
IMD23  
zExternal dimensions (Unit : mm)  
zFeatures  
1) Both the DTB113Z chip and DTC114E chip in a SMT  
package.  
IMD23  
2) Mounting possible with SMT3 automatic mounting  
machines.  
3) Transistor elements are independent, eliminating  
interference.  
1.6  
2.8  
4) Mounting cost and area can be cut in half.  
0.3to0.6  
Each lead has same dimensions  
ROHM : SMT6  
EIAJ : SC-74  
zStructure  
Epitaxial planar type  
Abbreviated symbol : D23  
NPN / PNP silicon transistor (Built-in resistor type)  
zEquivalent circuits  
(4)  
(5)  
(6)  
IMD23  
R2  
DTr1  
R1  
DTr2  
R1  
R2  
(3)  
(2)  
(1)  
DTr  
1
=(R  
1
/R  
2
=1k/10k)  
DTr2=(R  
1/R  
2=10k/10k)  
zAbsolute maximum ratings (Ta=25°C)  
DTr1  
Parameter  
Supply voltage  
Symbol  
Limits  
50  
Unit  
V
V
CC  
IN  
Input voltage  
V
V
10 to +5  
500  
Output current  
I
C
mA  
mW  
°C  
°C  
Power dissipation  
Junction temperature  
Storage temperature  
Pd  
Tj  
300(Total)  
150  
Tstg  
55 to +150  
200mW per element must not be a exceeded.  
1/4  

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