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IDT71V35761S183PF PDF预览

IDT71V35761S183PF

更新时间: 2024-11-04 22:23:55
品牌 Logo 应用领域
艾迪悌 - IDT 计数器静态存储器
页数 文件大小 规格书
22页 283K
描述
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

IDT71V35761S183PF 数据手册

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128K x 36, 256K x 18  
IDT71V35761S  
IDT71V35781S  
IDT71V35761SA  
IDT71V35781SA  
3.3VSynchronousSRAMs  
3.3VI/O,PipelinedOutputs  
BurstCounter,SingleCycleDeselect  
Features  
Description  
128K x 36, 256K x 18 memory configurations  
The IDT71V35761/781 are high-speed SRAMs organized as  
128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,  
addressandcontrolregisters. InternallogicallowstheSRAMtogenerate  
aself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendof  
thewritecycle.  
Supports high system speed:  
Commercial:  
– 200MHz 3.1ns clock access time  
CommercialandIndustrial:  
– 183MHz 3.3ns clock access time  
– 166MHz 3.5ns clock access time  
LBO input selects interleaved or linear burst mode  
Theburstmodefeatureoffersthehighestlevelofperformancetothe  
systemdesigner,astheIDT71V35761/81canprovidefourcyclesofdata  
forasingleaddress presentedtotheSRAM. Aninternalburstaddress  
Self-timedwritecyclewithglobalwritecontrol(GW),bytewrite counteracceptsthefirstcycleaddressfromtheprocessor,initiatingthe  
enable (BWE), and byte writes (BWx)  
3.3V core power supply  
Power down controlled by ZZ input  
3.3V I/O  
accesssequence.Thefirstcycleofoutputdatawillbepipelinedforone  
cycle before it is available on the next rising clock edge. If burst mode  
operationisselected(ADV=LOW),thesubsequentthreecyclesofoutput  
datawillbeavailabletotheuseronthenextthreerisingclockedges. The  
Optional - Boundary Scan JTAG Interface (IEEE 1149.1 orderofthesethreeaddressesaredefinedbytheinternalburstcounter  
compliant)  
andthe LBO inputpin.  
Packaged in a JEDEC Standard 100-pin plastic thin quad  
TheIDT71V35761/781SRAMsutilizeIDT’slatesthigh-performance  
flatpack(TQFP),119ballgridarray(BGA)and165finepitchball CMOSprocessandarepackagedinaJEDECstandard14mmx20mm  
grid array  
100-pin thinplasticquadflatpack(TQFP)aswellasa119ballgridarray  
(BGA) and 165 fine pitch ball grid array.  
PinDescriptionSummary  
A0-A17  
Address Inputs  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Output  
Input  
Input  
I/O  
Synchronous  
Synchronous  
Synchronous  
Asynchronous  
Synchronous  
Synchronous  
Synchronous  
N/A  
Chip Enable  
CE  
CS0, CS1  
OE  
Chip Selects  
Output Enable  
Global Write Enable  
Byte Write Enable  
Individual Byte Write Selects  
Clock  
GW  
BWE  
(1)  
BW1, BW2, BW3, BW4  
CLK  
Burst Address Advance  
Address Status (Cache Controller)  
Address Status (Processor)  
Linear / Interleaved Burst Order  
Test Mode Select  
Test Data Input  
Synchronous  
Synchronous  
Synchronous  
DC  
ADV  
ADSC  
ADSP  
LBO  
TMS  
Synchronous  
Synchronous  
N/A  
TDI  
TCK  
Test Clock  
TDO  
Test Data Output  
Synchronous  
Asynchronous  
Asynchronous  
Synchronous  
N/A  
JTAG Reset (Optional)  
Sleep Mode  
TRST  
ZZ  
I/O0-I/O31, I/OP1-I/OP4  
VDD, VDDQ  
Data Input / Output  
Core Power, I/O Power  
Ground  
Supply  
Supply  
VSS  
N/A  
NOTE:  
5301 tbl 01  
1. BW3 and BW4 are not applicable for the IDT71V35781.  
JUNE 2003  
1
©2003IntegratedDeviceTechnology,Inc.  
DSC-5301/03  

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