Datasheet > 存储 > SRAM> IDT71V256SA10PZ

IDT71V256SA10PZ

更新时间： 2024-11-15 23:08:19

品牌	Logo	应用领域
艾迪悌 - IDT		静态存储器
页数	文件大小	规格书
6页	72K
描述
LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT)

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IDT71V256SA10PZ 数据手册

IDT71V256SA

LOW POWER

3.3V CMOS FAST SRAM

256K (32K x 8-BIT)

Integrated Device Technology, Inc.

FEATURES

• Ideal for high-performance processor secondary cache

DESCRIPTION

TheIDT71V256SAisa 262,144-bithigh-speedstaticRAM

• Commercial (0° to 70°C) and Industrial (-40° to 85°C) organized as 32K x 8. It is fabricated using IDT’s high-

temperature options

performance, high-reliability CMOS technology.

• Fast access times:

— Commercial: 10/12/15/20ns

— Industrial: 15ns

• Low standby current (maximum):

— 2mA full standby

• Small packages for space-efficient layouts:

— 28-pin 300 mil SOJ

The IDT71V256SA has outstanding low power character-

istics while at the same time maintaining very high perfor-

mance. Address access times of as fast as10 ns are ideal for

3.3V secondary cache in 3.3V desktop designs.

When power management logic puts the IDT71V256SA in

standby mode, its very low power characteristics contribute to

extended battery life. By taking CS HIGH, the SRAM will

automatically go to a low power standby mode and will remain

in standby as long as CS remains HIGH. Furthermore, under

— 28-pin 300 mil plastic DIP (Commercial only)

— 28-pin TSOP Type I

• Produced with advanced high-performance CMOS full standby mode (CS at CMOS level, f=0), power consump-

technology

• Inputs and outputs are LVTTL-compatible

• Single 3.3V(±0.3V) power supply

tion is guaranteed to always be less than 6.6mW and typically

will be much smaller.

The IDT71V256SA is packaged in 28-pin 300 mil SOJ, 28-

pin 300 mil plastic DIP, and 28-pin 300 mil TSOP Type I

packaging.

FUNCTIONAL BLOCK DIAGRAM

VCC

GND

262,144 BIT

MEMORY ARRAY

ADDRESS

DECODER

A14

I/O0

I/O CONTROL

INPUT

DATA

CIRCUIT

I/O7

CONTROL

CIRCUIT

3101 drw 01

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

INDUSTRIAL AND COMMERCIAL TEMPERATURE RANGES

MAY 1997

1997 Integrated Device Technology, Inc.

DSC-3101/04

12 3 4 5 6

中文翻译

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IDT71V256SA10PZ 替代型号

型号	品牌	替代类型	描述	数据表
CY7C1399BN-12ZXC	CYPRESS	功能相似	256K (32K x 8) Static RAM

与IDT71V256SA10PZ相关器件

型号	品牌	获取价格	描述	数据表
IDT71V256SA10PZG8	IDT	获取价格	Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)
IDT71V256SA10PZGI	IDT	获取价格	Cache SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, TSOP1-28
IDT71V256SA10PZGI8	IDT	获取价格	Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)
IDT71V256SA10PZI	IDT	获取价格	Cache SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, TSOP1-28
IDT71V256SA10PZI8	IDT	获取价格	Cache SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, TSOP1-28
IDT71V256SA10TP	IDT	获取价格	LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT)
IDT71V256SA10Y	IDT	获取价格	LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT)
IDT71V256SA10YG8	IDT	获取价格	Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)
IDT71V256SA10YGI	IDT	获取价格	Cache SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, SOJ-28
IDT71V256SA10YGI8	IDT	获取价格	Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

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