Datasheet > 存储 > SRAM> IDT71V256SA10TP

IDT71V256SA10TP

更新时间： 2024-09-28 23:08:19

品牌	Logo	应用领域
艾迪悌 - IDT		静态存储器
页数	文件大小	规格书
6页	72K
描述
LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IDT71V256SA10TP 数据手册

IDT71V256SA

LOW POWER

3.3V CMOS FAST SRAM

256K (32K x 8-BIT)

Integrated Device Technology, Inc.

FEATURES

• Ideal for high-performance processor secondary cache

DESCRIPTION

TheIDT71V256SAisa 262,144-bithigh-speedstaticRAM

• Commercial (0° to 70°C) and Industrial (-40° to 85°C) organized as 32K x 8. It is fabricated using IDT’s high-

temperature options

performance, high-reliability CMOS technology.

• Fast access times:

— Commercial: 10/12/15/20ns

— Industrial: 15ns

• Low standby current (maximum):

— 2mA full standby

• Small packages for space-efficient layouts:

— 28-pin 300 mil SOJ

The IDT71V256SA has outstanding low power character-

istics while at the same time maintaining very high perfor-

mance. Address access times of as fast as10 ns are ideal for

3.3V secondary cache in 3.3V desktop designs.

When power management logic puts the IDT71V256SA in

standby mode, its very low power characteristics contribute to

extended battery life. By taking CS HIGH, the SRAM will

automatically go to a low power standby mode and will remain

in standby as long as CS remains HIGH. Furthermore, under

— 28-pin 300 mil plastic DIP (Commercial only)

— 28-pin TSOP Type I

• Produced with advanced high-performance CMOS full standby mode (CS at CMOS level, f=0), power consump-

technology

• Inputs and outputs are LVTTL-compatible

• Single 3.3V(±0.3V) power supply

tion is guaranteed to always be less than 6.6mW and typically

will be much smaller.

The IDT71V256SA is packaged in 28-pin 300 mil SOJ, 28-

pin 300 mil plastic DIP, and 28-pin 300 mil TSOP Type I

packaging.

FUNCTIONAL BLOCK DIAGRAM

VCC

GND

262,144 BIT

MEMORY ARRAY

ADDRESS

DECODER

A14

I/O0

I/O CONTROL

INPUT

DATA

CIRCUIT

I/O7

CONTROL

CIRCUIT

3101 drw 01

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

INDUSTRIAL AND COMMERCIAL TEMPERATURE RANGES

MAY 1997

1997 Integrated Device Technology, Inc.

DSC-3101/04

12 3 4 5 6

中文翻译

下载PDF

与IDT71V256SA10TP相关器件

型号	品牌	获取价格	描述	数据表
IDT71V256SA10Y	IDT	获取价格	LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT)
IDT71V256SA10YG8	IDT	获取价格	Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)
IDT71V256SA10YGI	IDT	获取价格	Cache SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, SOJ-28
IDT71V256SA10YGI8	IDT	获取价格	Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)
IDT71V256SA10YI	IDT	获取价格	Cache SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, SOJ-28
IDT71V256SA10YI8	IDT	获取价格	Cache SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, SOJ-28
IDT71V256SA12PZ	IDT	获取价格	LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT)
IDT71V256SA12PZG8	IDT	获取价格	Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)
IDT71V256SA12PZGI	IDT	获取价格	Cache SRAM, 32KX8, 12ns, CMOS, PDSO28, 0.300 INCH, TSOP1-28
IDT71V256SA12PZGI8	IDT	获取价格	Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)