是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | QFP |
包装说明: | QFF, | 针数: | 100 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.92 |
Is Samacsys: | N | 最长访问时间: | 25 ns |
JESD-30 代码: | S-PQFP-F100 | JESD-609代码: | e0 |
长度: | 14 mm | 内存密度: | 65536 bit |
内存集成电路类型: | DUAL-PORT SRAM | 内存宽度: | 16 |
湿度敏感等级: | 3 | 功能数量: | 1 |
端子数量: | 100 | 字数: | 4096 words |
字数代码: | 4000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 4KX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | QFF | 封装形状: | SQUARE |
封装形式: | FLATPACK | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | 240 | 认证状态: | Not Qualified |
座面最大高度: | 1.6 mm | 最大供电电压 (Vsup): | 1.9 V |
最小供电电压 (Vsup): | 1.7 V | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | FLAT | 端子节距: | 0.5 mm |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | 20 |
宽度: | 14 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IDT70P25 | IDT |
获取价格 |
HIGH-SPEED 1.8V 8/4K x 18 DUAL-PORT, 8/4K x 16 DUAL-PORT STATIC RAM | |
IDT70P256L55BYGI | IDT |
获取价格 |
Dual-Port SRAM, 8KX16, 55ns, CMOS, PBGA100, 0.50 MM PITCH, GREEN, BGA-100 | |
IDT70P256L55BYI | IDT |
获取价格 |
SRAM | |
IDT70P257 | IDT |
获取价格 |
VERY LOW POWER 1.8V 8K/4K x 16 DUAL-PORT STATIC RAM | |
IDT70P25755BYI | IDT |
获取价格 |
VERY LOW POWER 1.8V 8K/4K x 16 DUAL-PORT STATIC RAM | |
IDT70P257L | IDT |
获取价格 |
VERY LOW POWER 1.8V 8K/4K x 16 DUAL-PORT STATIC RAM | |
IDT70P257L55BYGI | IDT |
获取价格 |
Dual-Port SRAM, 8KX16, 55ns, CMOS, PBGA100, 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, GREEN, B | |
IDT70P257L55BYGI8 | IDT |
获取价格 |
Dual-Port SRAM, 8KX16, 55ns, CMOS, PBGA100, 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, GREEN, B | |
IDT70P257L55BYI | IDT |
获取价格 |
VERY LOW POWER 1.8V 8K/4K x 16 DUAL-PORT STATIC RAM | |
IDT70P257L55BYI8 | IDT |
获取价格 |
Dual-Port SRAM, 8KX16, 55ns, CMOS, PBGA100, 0.5 MM PITCH, BGA-100 |