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IDT70P25L25BF8 PDF预览

IDT70P25L25BF8

更新时间: 2024-11-05 21:20:35
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
22页 288K
描述
Dual-Port SRAM, 8KX16, 25ns, CMOS, PBGA100, 0.80 MM PITCH, FPBGA-100

IDT70P25L25BF8 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:BGA
包装说明:LFBGA,针数:100
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.92
最长访问时间:25 nsJESD-30 代码:S-PBGA-B100
JESD-609代码:e0长度:10 mm
内存密度:131072 bit内存集成电路类型:DUAL-PORT SRAM
内存宽度:16功能数量:1
端子数量:100字数:8192 words
字数代码:8000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:8KX16封装主体材料:PLASTIC/EPOXY
封装代码:LFBGA封装形状:SQUARE
封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):225认证状态:Not Qualified
座面最大高度:1.5 mm最大供电电压 (Vsup):1.9 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
宽度:10 mmBase Number Matches:1

IDT70P25L25BF8 数据手册

 浏览型号IDT70P25L25BF8的Datasheet PDF文件第2页浏览型号IDT70P25L25BF8的Datasheet PDF文件第3页浏览型号IDT70P25L25BF8的Datasheet PDF文件第4页浏览型号IDT70P25L25BF8的Datasheet PDF文件第5页浏览型号IDT70P25L25BF8的Datasheet PDF文件第6页浏览型号IDT70P25L25BF8的Datasheet PDF文件第7页 
HIGH-SPEED 1.8V  
8/4K x 18 DUAL-PORT  
8/4K x 16 DUAL-PORT  
STATIC RAM  
ADVANCED  
IDT70P35/34L  
IDT70P25/24L  
Features  
select when cascading more than one device  
M/S = VIH for BUSY output flag on Master  
M/S = VIL for BUSY input on Slave  
BUSY and Interrupt Flag  
On-chip port arbitration logic  
True Dual-Ported memory cells which allow simultaneous  
reads of the same memory location  
High-speed access  
IDT70P35/34L (IDT70P25/24L)  
– Commercial: 20/25ns (max.)  
Full on-chip hardware support of semaphore signaling  
between ports  
– Industrial: 25ns (max.)  
Low-power operation  
Fully asynchronous operation from either port  
LVTTL-compatible, single 1.8V (±100mV) power supply  
Available in a 100-pin Thin Quad Flatpack (TQFP) package,  
100-pin 0.8mm pitch Ball Grid Array (fpBGA), and 100-pin  
0.5mm pitch BGA (fpBGA)  
IDT70P35/34L (IDT70P25/24L)  
Active:30.6mW(typ.)  
Standby: 5.4mW (typ.)  
Separate upper-byte and lower-byte control for multiplexed  
bus compatibility  
IDT70P35/34L (IDT70P25/24L) easily expands data bus  
width to 36 bits (32 bits) or more using the Master/Slave  
Industrial temperature range (-40°C to +85°C) is available  
for selected speeds  
Functional Block Diagram  
R/W  
L
R/W  
R
R
UBL  
UB  
LB  
CE  
OE  
R
LB  
L
CEL  
R
R
OEL  
,
(5)  
(5)  
(4)  
I/O9R-I/O17R  
I/O9L-I/O17L  
I/O  
Control  
I/O  
Control  
(4)  
I/O0R-I/O8R  
I/O0L-I/O8L  
BUSY (2,3)  
L
(2,3)  
BUSY  
R
(1)  
12L  
(1)  
A
A
A
12R  
0R  
Address  
Decoder  
MEMORY  
ARRAY  
Address  
Decoder  
A0L  
13  
13  
ARBITRATION  
INTERRUPT  
SEMAPHORE  
LOGIC  
CE  
OE  
R/W  
R
CE  
OE  
R/W  
L
L
R
R
L
SEM  
R
SEM  
L
(3)  
(3)  
INTR  
M/S  
INTL  
5683 drw 01  
NOTES:  
1. A12 is a NC for IDT70P34 and IDT70P24.  
2. (MASTER): BUSY is output; (SLAVE): BUSY is input.  
3. BUSY outputs and INT outputs are non-tri-stated push-pull.  
4. I/O0x - I/O7x for IDT70P25/24.  
5. I/O8x - I/O15x for IDT70P25/24.  
FEBRUARY 2004  
1
DSC-5683/2  
©2004 IntegratedDeviceTechnology,Inc.  

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