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IAUT240N08S5N019 PDF预览

IAUT240N08S5N019

更新时间: 2024-02-04 15:40:28
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 232K
描述
车规级MOSFET

IAUT240N08S5N019 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:2.27湿度敏感等级:1
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

IAUT240N08S5N019 数据手册

 浏览型号IAUT240N08S5N019的Datasheet PDF文件第3页浏览型号IAUT240N08S5N019的Datasheet PDF文件第4页浏览型号IAUT240N08S5N019的Datasheet PDF文件第5页浏览型号IAUT240N08S5N019的Datasheet PDF文件第7页浏览型号IAUT240N08S5N019的Datasheet PDF文件第8页浏览型号IAUT240N08S5N019的Datasheet PDF文件第9页 
IAUT240N08S5N019  
9 Typ. gate threshold voltage  
VGS(th) = f(T j); VGS = VDS  
parameter: I D  
10 Typ. capacitances  
C = f(VDS); VGS = 0 V; f = 1 MHz  
104  
4
3.5  
3
Ciss  
Coss  
1600 µA  
103  
160 µA  
2.5  
102  
2
1.5  
1
Crss  
0
10  
20  
30  
40  
50  
60  
70  
80  
-60  
-20  
20  
60  
100  
140  
180  
Tj [°C]  
VDS [V]  
11 Typical forward diode characteristicis  
12 Typ. avalanche characteristics  
I AS = f(t AV  
IF = f(VSD)  
)
parameter: T j  
parameter: Tj(start)  
103  
1000  
25 °C  
100 °C  
102  
100  
150 °C  
25 °C  
175 °C  
101  
10  
100  
1
1
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
10  
100  
1000  
VSD [V]  
tAV [µs]  
Rev. 1.0  
page 6  
2017-07-20  

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