Datasheet > IAUZ18N10S5L420

IAUZ18N10S5L420

更新时间： 2023-12-06 20:12:33

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	780K
描述
车规级MOSFET

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中文翻译

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数据手册

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IAUZ18N10S5L420 数据手册

IAUZ18N10S5L420

OptiMOS^™-5 Power-Transistor

Product Summary

V_DS

100

R_DS(on),max

I_D

Features

PG-TSDSON-8

• OptiMOS™ - power MOSFET for automotive applications

• N-channel - Enhancement mode - Logic Level

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

• Feasible for automatic optical inspection (AOI)

Type

Package

Marking

IAUZ18N10S5L420

PG-TSDSON-8

5N1L420

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

I _D

T _C=25°C, V_GS=10V

Continuous drain current

T _C=100°C, V_GS=10V¹⁾

Pulsed drain current¹⁾

I _D,pulse

E_AS

I _AS

T _C=25°C

Avalanche energy, single pulse¹⁾

Avalanche current, single pulse

Gate source voltage

I _D=7A

V_GS

±20

T _C=25°C

T_J=175°C

P_tot

Power dissipation

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

°C

Rev. 1.0

page 1

2019-07-23

12 3 4 5 6 7...10

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