Datasheet > IAUZ30N06S5L140

IAUZ30N06S5L140

更新时间： 2024-11-21 14:56:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	1001K
描述
车规级MOSFET

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中文翻译

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IAUZ30N06S5L140 数据手册

IAUZ30N06S5L140

OptiMOS^™-5 Power Transistor

Product Summary

V_DS

Features

R_DS(on),max

I_D

• OptiMOS™ power MOSFET for automotive applications

• N-channel - Enhancement mode - Logic level

• MSL1 up to 260°C peak reflow

• 175 °C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

PG-TSDSON-8-32

Type

Package

Marking

PG-TSDSON-8-32

IAUZ30N06S5L140

5N6L140

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

V_GS=10 V, Chip

limitation^1,2)

I _D

Drain current

V_GS=10V, DC current

T _a=85 °C, V_GS=10 V,

R _thJAon 2s2p^2,3)

Pulsed drain current²⁾

I _D,pulse

E_AS

T _C=25 °C, t _p= 100 µs

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=15 A

I _AS

V_GS

±16

P_tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

-55 ... +175

Rev. 1.1

page 1

2021-03-18

12 3 4 5 6 7...10

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