Datasheet > IAUZ40N08S5N100

IAUZ40N08S5N100

更新时间： 2023-09-03 20:32:29

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	826K
描述
车规级MOSFET

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中文翻译

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数据手册

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IAUZ40N08S5N100 数据手册

IAUZ40N08S5N100

OptiMOS™-5 Power-Transistor

Product Summary

V_DS

R_DS(on)

I_D

Features

• OptiMOS™ - power MOSFET for automotive applications

• N-channel - Enhancement mode - Normal Level

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

PG-TSDSON-8

• Green product (RoHS compliant)

• 100% Avalanche tested

Quality Features

• Infineon Automotive Quality

• Extended qualification beyond AEC Q101

• Enhanced testing

• Advanced adhesion against delamination

• Complementary testing for board level reliability

Type

Package

Marking

PG-TSDSON-8

5N08100

IAUZ40N08S5N100

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

T _C=25°C,V_GS=10V¹⁾

I _D

Continous drain current

T _C=100 °C,

V_GS=10 V²⁾

Pulsed drain current²⁾

I _D,pulse

E_AS

I _AS

T _C=25°C

160

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=20 A

V_GS

P_tot

±20

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.0

page 1

2019-09-16

12 3 4 5 6 7...9

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