Datasheet > IAUTN12S5N018G

IAUTN12S5N018G

更新时间： 2024-02-23 09:11:29

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	1461K
描述
The IAUTN12S5N018G is a 1.8 m?, 120 V MOSFET coming in the TOLG package with Infineon’s leading OptiMOS? 5 technology. Next to other applications, the device is designed for HV-LV DCDC converter.

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IAUTN12S5N018G 数据手册

IAUTN12S5N018G

Automotive MOSFET

OptiMOS™ 5 Power-Transistor

PG-HSOG-8-1

Tab

Features

Tab

• OptiMOS™ power MOSFET for automotive applications

• N-channel – enhancement mode – normal level

• Extended qualification beyond AEC-Q101

• Enhanced electrical testing

• Robust design

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• RoHS compliant

• 100% avalanche tested

• Very low reverse recovery charge (Q_rr)

Potential applications

General automotive applications.

Product validation

Qualified for automotive applications. Product validation according to AEC-Q101.

Product Summary

V_DS

120

1.8

R_DS(on)

mΩ

I_D(chip limited)

310

Type

Package

Marking

IAUTN12S5N018G

PG-HSOG-8-1

5N12N018

Data Sheet

Rev 1.01

Please read the Important Notice and Warnings at the end of this document

www.infineon.com/mosfets

2023-08-29

12 3 4 5 6 7...12

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